IRFS4115PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFS4115PBF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 375 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 195 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 73 ns
Cossⓘ - Выходная емкость: 490 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0121 Ohm
Тип корпуса: TO-263
Аналог (замена) для IRFS4115PBF
IRFS4115PBF Datasheet (PDF)
irfs4115pbf irfsl4115pbf.pdf
PD - 96198AIRFS4115PbFIRFSL4115PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS150Vl Uninterruptible Power SupplyRDS(on) typ.10.3ml High Speed Power Switching max. 12.1ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 99A BenefitsID (Package Limited)195A Sl Improved Gate, Avalanche and Dynamic
irfs4115pbf irfsl4115pbf.pdf
PD - 96198AIRFS4115PbFIRFSL4115PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS150Vl Uninterruptible Power SupplyRDS(on) typ.10.3ml High Speed Power Switching max. 12.1ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 99A BenefitsID (Package Limited)195A Sl Improved Gate, Avalanche and Dynamic
irfs4115pbf.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFS4115PbFFEATURESWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T
irfs4115-7ppbf.pdf
PD -97147IRFS4115-7PPbFHEXFET Power MOSFETApplicationsDVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.10.0m:l High Speed Power Switchingl Hard Switched and High Frequency CircuitsGmax. 11.8m:ID 105ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance
auirfs4115-7p.pdf
AUIRFS4115-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology VDSS 150V Ultra Low On-Resistance RDS(on) typ. 10m Dynamic dV/dT Rating max. 11.8m 175C Operating Temperature ID 105A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Descrip
irfs4115-7ppbf.pdf
PD -97147IRFS4115-7PPbFHEXFET Power MOSFETApplicationsDVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.10.0m:l High Speed Power Switchingl Hard Switched and High Frequency CircuitsGmax. 11.8m:ID 105ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance
auirfs4115 auirfsl4115.pdf
AUIRFS4115 AUTOMOTIVE GRADE AUIRFSL4115 HEXFET Power MOSFET VDSS 150V Features Advanced Process Technology RDS(on) typ. 10.3m Ultra Low On-Resistance max. 12.1m 175C Operating Temperature Fast Switching ID 99A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description S S
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: QM2409J
History: QM2409J
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918