STB60NH02LT4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STB60NH02LT4
Código: B60NH02L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 70 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 24 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 24 nC
trⓘ - Tiempo de subida: 130 nS
Cossⓘ - Capacitancia de salida: 400 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de MOSFET STB60NH02LT4
STB60NH02LT4 Datasheet (PDF)
stb60nh02lt4.pdf
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stb60ne06l-16.pdf
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stb60nf06.pdf
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stb60n06-14.pdf
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