STB60NH02LT4 Specs and Replacement

Type Designator: STB60NH02LT4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: TO-263

STB60NH02LT4 substitution

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STB60NH02LT4 datasheet

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 stb60nh02lt4.pdf pdf_icon

STB60NH02LT4

STB60NH02L N-CHANNEL 24V - 0.0085 - 60A D PAK STripFET III POWER MOSFET TYPE VDSS RDS(on) ID STB60NH02L 24 V ... See More ⇒

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 stb60nh02l.pdf pdf_icon

STB60NH02LT4

STB60NH02L N-CHANNEL 24V - 0.0085 - 60A D PAK STripFET III POWER MOSFET TYPE VDSS RDS(on) ID STB60NH02L 24 V ... See More ⇒

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 stb60ne03l-12.pdf pdf_icon

STB60NH02LT4

STB60NE03L-12 N - CHANNEL 30V - 0.009 - 60A - D2PAK "SINGLE FEATURE SIZE " POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STB60NE03L-12 30 V ... See More ⇒

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 stb60nf06.pdf pdf_icon

STB60NH02LT4

STB60NF06 N-CHANNEL 60V - 0.014 - 60A D2PAK STripFET POWER MOSFET TYPE VDSS RDS(on) ID STB60NF06 60V ... See More ⇒

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Detailed specifications: STB5NK50ZT4, STB5NK52ZD-1, STB60NE06L-16T4, STB60NF06-1, STB60NF06LT4, STB60NF06T4, STB60NF10-1, STB60NF10T4, AO4468, STB6N60M2, STB6N62K3, STB6N65M2, STB6N80K5, STB6NK60ZT4, STB6NK90ZT4, STB6NM60N, STB70N10F4

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