STB6N80K5 Todos los transistores

 

STB6N80K5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STB6N80K5
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 85 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7.5 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
   Paquete / Cubierta: D2PAK

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STB6N80K5 Datasheet (PDF)

 ..1. Size:1285K  st
stb6n80k5 std6n80k5 sti6n80k5 stp6n80k5.pdf

STB6N80K5
STB6N80K5

STB6N80K5, STD6N80K5,STI6N80K5, STP6N80K5N-channel 800 V, 1.3 typ., 4.5 A MDmesh K5Power MOSFETs in DPAK, DPAK, IPAK and TO-220 packagesDatasheet - production dataFeaturesTABTABOrder codes VDS RDS(on)max ID PTOT3131STB6N80K5DPAKD2PAKSTD6N80K5TAB TAB800 V 1.6 4.5 A 85 WSTI6N80K5STP6N80K5323211 Industrys lowest RDS(on)TO-

 9.1. Size:532K  st
stb6nc80z stp6nc80z.pdf

STB6N80K5
STB6N80K5

STP6NC80Z - STP6NC80ZFPSTB6NC80Z - STB6NC80Z-1N-CHANNEL 800V - 1.5 - 5.4A TO-220/FP/DPAK/IPAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP6NC80Z/FP 800V

 9.2. Size:130K  st
stb6na60.pdf

STB6N80K5
STB6N80K5

STB6NA60N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on ) DSTB6NA60 600 V

 9.3. Size:692K  st
stb6nm60n std6nm60n-1 std6nm60n stf6nm60n stp6nm60n.pdf

STB6N80K5
STB6N80K5

STx6NM60NN-channel 600 V, 0.85 , 4.6 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID(@Tjmax) max33STB6NM60N 650 V

 9.4. Size:448K  st
stb6nk60z stb6nk60z-1 stp6nk60zfp stp6nk60z.pdf

STB6N80K5
STB6N80K5

STB6NK60Z - STB6NK60Z-1STP6NK60ZFP - STP6NK60ZN-channel 600 V - 1 - 6 A - TO-220/TO-220FP/D2PAK/I2PAKZener-Protected SuperMESH Power MOSFETFeaturesType VDSS RDS(on) ID PWSTB6NK60Z 600 V

 9.5. Size:126K  st
stb6na80.pdf

STB6N80K5
STB6N80K5

STB6NA80N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on ) DSTB6NA80 800 V

 9.6. Size:481K  st
stp6nk90z stp6nk90zfp stb6nk90z stw7nk90z.pdf

STB6N80K5
STB6N80K5

STP6NK90Z - STP6NK90ZFPSTB6NK90Z - STW7NK90ZN-channel 900V - 1.56 - 5.8A - TO-220/TO-220FP/D2PAK/TO-247Zener-protected SuperMESH Power MOSFETFeaturesType VDSS RDS(on) IDSTP6NK90Z 900 V

 9.7. Size:653K  st
stb6nk90zt4 stp6nk90z stp6nk90zfp stw7nk90z.pdf

STB6N80K5
STB6N80K5

STB6NK90ZT4, STP6NK90Z STP6NK90ZFP, STW7NK90ZDatasheetN-channel 900 V, 1.56 typ., 5.8 A SuperMESH Power MOSFET in D2PAK, TO-220, TO-220FP and TO-247 packagesFeaturesTABTAB3Order codes VDS RDS(on)max. ID123D PAKTO-220 21 STB6NK90ZT4STP6NK90Z900 V 2 5.8 ASTP6NK90ZFP32 STW7NK90Z312TO-220FPTO-2471 Extremely high dv/dt capability

 9.8. Size:881K  st
stb6n65m2 std6n65m2.pdf

STB6N80K5
STB6N80K5

STB6N65M2, STD6N65M2N-channel 650 V, 1.2 typ., 4 A MDmesh M2 Power MOSFETs in D2PAK and DPAK packagesDatasheet - preliminary dataFeaturesOrder codes VDS RDS(on) max IDSTB6N65M2650 V 1.35 4 ATAB TABSTD6N65M2313 Extremely low gate charge1DPAK2D PAK Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protectedApp

 9.9. Size:1156K  st
stb6n60m2 std6n60m2.pdf

STB6N80K5
STB6N80K5

STB6N60M2, STD6N60M2N-channel 600 V, 1.06 typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in D2PAK and DPAK packagesDatasheet - production dataFeaturesVDS @ RDS(on) Order codes IDTJmax maxTAB TABSTB6N60M2650 V 1.2 4.5 A3STD6N60M2131DPAK2 Extremely low gate chargeD PAK Lower RDS(on) x area vs previous generation Low gate input resistanc

 9.10. Size:476K  st
stb6nk90zt4 stp6nk90zfp.pdf

STB6N80K5
STB6N80K5

STP6NK90Z - STP6NK90ZFPSTB6NK90Z - STW7NK90ZN-channel 900V - 1.56 - 5.8A - TO-220/TO-220FP/D2PAK/TO-247Zener-protected SuperMESH Power MOSFETFeaturesType VDSS RDS(on) IDSTP6NK90Z 900 V

 9.11. Size:281K  st
stb6nb50.pdf

STB6N80K5
STB6N80K5

STB6NB50N - CHANNEL 500V - 1.35 - 5.8A - D2PAK/I2PAKPowerMESH MOSFETTYPE VDSS RDS(on) IDSTB6NB50 500 V

 9.12. Size:685K  st
stb6nm60n std6nm60n stf6nm60n stp6nm60n.pdf

STB6N80K5
STB6N80K5

STx6NM60NN-channel 600 V, 0.85 , 4.6 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID(@Tjmax) max33STB6NM60N 650 V

 9.13. Size:445K  st
stb6nk60zt4 stp6nk60zfp.pdf

STB6N80K5
STB6N80K5

STB6NK60Z - STB6NK60Z-1STP6NK60ZFP - STP6NK60ZN-channel 600 V - 1 - 6 A - TO-220/TO-220FP/D2PAK/I2PAKZener-Protected SuperMESH Power MOSFETFeaturesType VDSS RDS(on) ID PWSTB6NK60Z 600 V

 9.14. Size:1153K  st
stb6n52k3 std6n52k3 stf6n52k3 stp6n52k3.pdf

STB6N80K5
STB6N80K5

STB6N52K3, STD6N52K3STF6N52K3, STP6N52K3N-channel 525 V, 1 , 5 A, DPAK, DPAK, TO-220FP, TO-220SuperMESH3 Power MOSFETFeaturesRDS(on) 3Order codes VDSS ID Pwmax132STB6N52K3 5 A 70 WDPAK1STD6N52K3 5 A(1) 25 WTO-220FP525 V

 9.15. Size:1061K  st
stb6n62k3.pdf

STB6N80K5
STB6N80K5

STB6N62K3STD6N62K3N-channel 620 V, 0.95 , 5.5 A SuperMESH3 Power MOSFETin DPAK, DPAKFeaturesRDS(on) Order codes VDSS max. ID PwTABSTB6N62K3620 V

 9.16. Size:99K  st
stb6nb50-.pdf

STB6N80K5
STB6N80K5

STB6NB50 N - CHANNEL 500V - 2.5 - 3.8A - D2PAK/I2PAKPowerMESH MOSFETTYPE VDSS RDS(on) IDSTB6NB50 500 V

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