STB6N80K5 Specs and Replacement
Type Designator: STB6N80K5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 25 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: D2PAK
STB6N80K5 substitution
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STB6N80K5 datasheet
stb6n80k5 std6n80k5 sti6n80k5 stp6n80k5.pdf
STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5 N-channel 800 V, 1.3 typ., 4.5 A MDmesh K5 Power MOSFETs in D PAK, DPAK, I PAK and TO-220 packages Datasheet - production data Features TAB TAB Order codes VDS RDS(on)max ID PTOT 3 1 3 1 STB6N80K5 DPAK D2PAK STD6N80K5 TAB TAB 800 V 1.6 4.5 A 85 W STI6N80K5 STP6N80K5 3 2 3 2 1 1 Industry s lowest RDS(on) TO-... See More ⇒
stb6nc80z stp6nc80z.pdf
STP6NC80Z - STP6NC80ZFP STB6NC80Z - STB6NC80Z-1 N-CHANNEL 800V - 1.5 - 5.4A TO-220/FP/D PAK/I PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS(on) ID STP6NC80Z/FP 800V ... See More ⇒
stb6na60.pdf
STB6NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V R I DSS DS(on ) D STB6NA60 600 V ... See More ⇒
stb6nm60n std6nm60n-1 std6nm60n stf6nm60n stp6nm60n.pdf
STx6NM60N N-channel 600 V, 0.85 , 4.6 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 STB6NM60N 650 V ... See More ⇒
Detailed specifications: STB60NF06LT4, STB60NF06T4, STB60NF10-1, STB60NF10T4, STB60NH02LT4, STB6N60M2, STB6N62K3, STB6N65M2, IRF740, STB6NK60ZT4, STB6NK90ZT4, STB6NM60N, STB70N10F4, STB70NF03LT4, STB70NF3LLT4, STB70NFS03LT4, STB70NH03LT4
Keywords - STB6N80K5 MOSFET specs
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