All MOSFET. STB6N80K5 Datasheet

 

STB6N80K5 Datasheet and Replacement


   Type Designator: STB6N80K5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: D2PAK
      - MOSFET Cross-Reference Search

 

STB6N80K5 Datasheet (PDF)

 ..1. Size:1285K  st
stb6n80k5 std6n80k5 sti6n80k5 stp6n80k5.pdf pdf_icon

STB6N80K5

STB6N80K5, STD6N80K5,STI6N80K5, STP6N80K5N-channel 800 V, 1.3 typ., 4.5 A MDmesh K5Power MOSFETs in DPAK, DPAK, IPAK and TO-220 packagesDatasheet - production dataFeaturesTABTABOrder codes VDS RDS(on)max ID PTOT3131STB6N80K5DPAKD2PAKSTD6N80K5TAB TAB800 V 1.6 4.5 A 85 WSTI6N80K5STP6N80K5323211 Industrys lowest RDS(on)TO-

 9.1. Size:532K  st
stb6nc80z stp6nc80z.pdf pdf_icon

STB6N80K5

STP6NC80Z - STP6NC80ZFPSTB6NC80Z - STB6NC80Z-1N-CHANNEL 800V - 1.5 - 5.4A TO-220/FP/DPAK/IPAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP6NC80Z/FP 800V

 9.2. Size:130K  st
stb6na60.pdf pdf_icon

STB6N80K5

STB6NA60N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on ) DSTB6NA60 600 V

 9.3. Size:692K  st
stb6nm60n std6nm60n-1 std6nm60n stf6nm60n stp6nm60n.pdf pdf_icon

STB6N80K5

STx6NM60NN-channel 600 V, 0.85 , 4.6 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID(@Tjmax) max33STB6NM60N 650 V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: VBNC1303

Keywords - STB6N80K5 MOSFET datasheet

 STB6N80K5 cross reference
 STB6N80K5 equivalent finder
 STB6N80K5 lookup
 STB6N80K5 substitution
 STB6N80K5 replacement

 

 
Back to Top

 


 
.