STB6NM60N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STx6NM60NN-channel 600 V, 0.85 , 4.6 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID(@Tjmax) max33STB6NM60N 650 V

STx6NM60NN-channel 600 V, 0.85 , 4.6 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID(@Tjmax) max33STB6NM60N 650 V

STP6NC80Z - STP6NC80ZFPSTB6NC80Z - STB6NC80Z-1N-CHANNEL 800V - 1.5 - 5.4A TO-220/FP/DPAK/IPAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP6NC80Z/FP 800V

STB6NA60N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on ) DSTB6NA60 600 V

STB6NK60Z - STB6NK60Z-1STP6NK60ZFP - STP6NK60ZN-channel 600 V - 1 - 6 A - TO-220/TO-220FP/D2PAK/I2PAKZener-Protected SuperMESH Power MOSFETFeaturesType VDSS RDS(on) ID PWSTB6NK60Z 600 V

STB6NA80N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on ) DSTB6NA80 800 V

STP6NK90Z - STP6NK90ZFPSTB6NK90Z - STW7NK90ZN-channel 900V - 1.56 - 5.8A - TO-220/TO-220FP/D2PAK/TO-247Zener-protected SuperMESH Power MOSFETFeaturesType VDSS RDS(on) IDSTP6NK90Z 900 V

STB6NK90ZT4, STP6NK90Z STP6NK90ZFP, STW7NK90ZDatasheetN-channel 900 V, 1.56 typ., 5.8 A SuperMESH Power MOSFET in D2PAK, TO-220, TO-220FP and TO-247 packagesFeaturesTABTAB3Order codes VDS RDS(on)max. ID123D PAKTO-220 21 STB6NK90ZT4STP6NK90Z900 V 2 5.8 ASTP6NK90ZFP32 STW7NK90Z312TO-220FPTO-2471 Extremely high dv/dt capability

STB6N65M2, STD6N65M2N-channel 650 V, 1.2 typ., 4 A MDmesh M2 Power MOSFETs in D2PAK and DPAK packagesDatasheet - preliminary dataFeaturesOrder codes VDS RDS(on) max IDSTB6N65M2650 V 1.35 4 ATAB TABSTD6N65M2313 Extremely low gate charge1DPAK2D PAK Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protectedApp

STB6N60M2, STD6N60M2N-channel 600 V, 1.06 typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in D2PAK and DPAK packagesDatasheet - production dataFeaturesVDS @ RDS(on) Order codes IDTJmax maxTAB TABSTB6N60M2650 V 1.2 4.5 A3STD6N60M2131DPAK2 Extremely low gate chargeD PAK Lower RDS(on) x area vs previous generation Low gate input resistanc

STP6NK90Z - STP6NK90ZFPSTB6NK90Z - STW7NK90ZN-channel 900V - 1.56 - 5.8A - TO-220/TO-220FP/D2PAK/TO-247Zener-protected SuperMESH Power MOSFETFeaturesType VDSS RDS(on) IDSTP6NK90Z 900 V

STB6NB50N - CHANNEL 500V - 1.35 - 5.8A - D2PAK/I2PAKPowerMESH MOSFETTYPE VDSS RDS(on) IDSTB6NB50 500 V

STB6NK60Z - STB6NK60Z-1STP6NK60ZFP - STP6NK60ZN-channel 600 V - 1 - 6 A - TO-220/TO-220FP/D2PAK/I2PAKZener-Protected SuperMESH Power MOSFETFeaturesType VDSS RDS(on) ID PWSTB6NK60Z 600 V

STB6N52K3, STD6N52K3STF6N52K3, STP6N52K3N-channel 525 V, 1 , 5 A, DPAK, DPAK, TO-220FP, TO-220SuperMESH3 Power MOSFETFeaturesRDS(on) 3Order codes VDSS ID Pwmax132STB6N52K3 5 A 70 WDPAK1STD6N52K3 5 A(1) 25 WTO-220FP525 V

STB6N80K5, STD6N80K5,STI6N80K5, STP6N80K5N-channel 800 V, 1.3 typ., 4.5 A MDmesh K5Power MOSFETs in DPAK, DPAK, IPAK and TO-220 packagesDatasheet - production dataFeaturesTABTABOrder codes VDS RDS(on)max ID PTOT3131STB6N80K5DPAKD2PAKSTD6N80K5TAB TAB800 V 1.6 4.5 A 85 WSTI6N80K5STP6N80K5323211 Industrys lowest RDS(on)TO-

STB6N62K3STD6N62K3N-channel 620 V, 0.95 , 5.5 A SuperMESH3 Power MOSFETin DPAK, DPAKFeaturesRDS(on) Order codes VDSS max. ID PwTABSTB6N62K3620 V

STB6NB50 N - CHANNEL 500V - 2.5 - 3.8A - D2PAK/I2PAKPowerMESH MOSFETTYPE VDSS RDS(on) IDSTB6NB50 500 V