All MOSFET. STB6NM60N Datasheet

 

STB6NM60N Datasheet and Replacement


   Type Designator: STB6NM60N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 4.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.92 Ohm
   Package: D2PAK
 

 STB6NM60N substitution

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STB6NM60N Datasheet (PDF)

 ..1. Size:692K  st
stb6nm60n std6nm60n-1 std6nm60n stf6nm60n stp6nm60n.pdf pdf_icon

STB6NM60N

STx6NM60NN-channel 600 V, 0.85 , 4.6 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID(@Tjmax) max33STB6NM60N 650 V

 ..2. Size:685K  st
stb6nm60n std6nm60n stf6nm60n stp6nm60n.pdf pdf_icon

STB6NM60N

STx6NM60NN-channel 600 V, 0.85 , 4.6 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID(@Tjmax) max33STB6NM60N 650 V

 9.1. Size:532K  st
stb6nc80z stp6nc80z.pdf pdf_icon

STB6NM60N

STP6NC80Z - STP6NC80ZFPSTB6NC80Z - STB6NC80Z-1N-CHANNEL 800V - 1.5 - 5.4A TO-220/FP/DPAK/IPAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP6NC80Z/FP 800V

 9.2. Size:130K  st
stb6na60.pdf pdf_icon

STB6NM60N

STB6NA60N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on ) DSTB6NA60 600 V

Datasheet: STB60NF10T4 , STB60NH02LT4 , STB6N60M2 , STB6N62K3 , STB6N65M2 , STB6N80K5 , STB6NK60ZT4 , STB6NK90ZT4 , IRF540 , STB70N10F4 , STB70NF03LT4 , STB70NF3LLT4 , STB70NFS03LT4 , STB70NH03LT4 , STB75N20 , STB75NF75LT4 , STB75NF75T4 .

History: IRF731FI | TMA20N65HG | TMA8N60H | IRFR4510TR | JFPC16N50C | SIRA72DP | HRLW250N10K

Keywords - STB6NM60N MOSFET datasheet

 STB6NM60N cross reference
 STB6NM60N equivalent finder
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