STB6NM60N MOSFET. Datasheet pdf. Equivalent
Type Designator: STB6NM60N
Marking Code: B6NM60N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 30 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.92 Ohm
Package: D2PAK
STB6NM60N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB6NM60N Datasheet (PDF)
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stb6nm60n std6nm60n stf6nm60n stp6nm60n.pdf
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STB6NB50 N - CHANNEL 500V - 2.5 - 3.8A - D2PAK/I2PAKPowerMESH MOSFETTYPE VDSS RDS(on) IDSTB6NB50 500 V
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
![STB6NM60N](https://alltransistors.com/images/us.png)
![STB6NM60N](https://alltransistors.com/images/es.png)
![STB6NM60N](https://alltransistors.com/images/ru.png)
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