STB6NM60N Specs and Replacement

Type Designator: STB6NM60N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 4.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.92 Ohm

Package: D2PAK

STB6NM60N substitution

- MOSFET ⓘ Cross-Reference Search

 

STB6NM60N datasheet

 ..1. Size:692K  st
stb6nm60n std6nm60n-1 std6nm60n stf6nm60n stp6nm60n.pdf pdf_icon

STB6NM60N

STx6NM60N N-channel 600 V, 0.85 , 4.6 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 STB6NM60N 650 V ... See More ⇒

 ..2. Size:685K  st
stb6nm60n std6nm60n stf6nm60n stp6nm60n.pdf pdf_icon

STB6NM60N

STx6NM60N N-channel 600 V, 0.85 , 4.6 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 STB6NM60N 650 V ... See More ⇒

 9.1. Size:532K  st
stb6nc80z stp6nc80z.pdf pdf_icon

STB6NM60N

STP6NC80Z - STP6NC80ZFP STB6NC80Z - STB6NC80Z-1 N-CHANNEL 800V - 1.5 - 5.4A TO-220/FP/D PAK/I PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS(on) ID STP6NC80Z/FP 800V ... See More ⇒

 9.2. Size:130K  st
stb6na60.pdf pdf_icon

STB6NM60N

STB6NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V R I DSS DS(on ) D STB6NA60 600 V ... See More ⇒

Detailed specifications: STB60NF10T4, STB60NH02LT4, STB6N60M2, STB6N62K3, STB6N65M2, STB6N80K5, STB6NK60ZT4, STB6NK90ZT4, IRF540N, STB70N10F4, STB70NF03LT4, STB70NF3LLT4, STB70NFS03LT4, STB70NH03LT4, STB75N20, STB75NF75LT4, STB75NF75T4

Keywords - STB6NM60N MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs