IRFS840B Todos los transistores

 ..1. Size:911K  fairchild semi
 irf840b irfs840b.pdf

 7.1. Size:316K  1
 irfs840 irfs841 irfs842 irfs843.pdf

 7.2. Size:277K  international rectifier
 auirfs8403 auirfsl8403.pdf

AUIRFS8403 AUTOMOTIVE GRADE AUIRFSL8403 HEXFET Power MOSFET Features l Advanced Process Technology D VDSS 40V l New Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) typ. 2.6m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G max. 3.3m l Lead-Free, RoHS Compliant Automotive Qualified * S ID (Silicon Limited) 123A Description Specifically desi

 7.3. Size:277K  international rectifier
 auirfs8409-7p.pdf

AUIRFS8409-7P AUTOMOTIVE GRADE Features HEXFET Power MOSFET l Advanced Process Technology 40V VDSS l New Ultra Low On-Resistance 0.55m RDS(on) typ. l 175 C Operating Temperature max. 0.75m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax 522A ID (Silicon Limited) l Lead-Free, RoHS Compliant 240A ID (Package Limited) l Automotive Qualified * Description

 7.4. Size:398K  international rectifier
 auirfb8409 auirfs8409 auirfsl8409.pdf

AUIRFB8409 AUTOMOTIVE GRADE AUIRFS8409 AUIRFSL8409 Features HEXFET Power MOSFET l Advanced Process Technology D l New Ultra Low On-Resistance VDSS 40V l 175 C Operating Temperature RDS(on) (SMD) typ. 0.97m l Fast Switching max. 1.2m l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free, RoHS Compliant ID (Silicon Limited) 409A l Automotive Qualified * ID (Package Li

 7.5. Size:351K  international rectifier
 auirfs8405 auirfsl8405.pdf

AUIRFS8405 AUTOMOTIVE GRADE AUIRFSL8405 Features HEXFET Power MOSFET l Advanced Process Technology D l New Ultra Low On-Resistance VDSS 40V l 175 C Operating Temperature RDS(on) typ.1.9m l Fast Switching max. 2.3m l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant G ID (Silicon Limited) 193A l Automotive Qualified * ID (Package Limited) 120A S De

 7.6. Size:340K  international rectifier
 auirfb8407 auirfs8407 auirfsl8407.pdf

AUIRFB8407 AUTOMOTIVE GRADE AUIRFS8407 AUIRFSL8407 Features HEXFET Power MOSFET l Advanced Process Technology l New Ultra Low On-Resistance VDSS 40V D l 175 C Operating Temperature RDS(on) typ. 1.4m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax (SMD version) max. 1.8m l Lead-Free, RoHS Compliant G 250A ID (Silicon Limited) Automotive Qualified * S

 7.7. Size:220K  international rectifier
 auirfs8407-7p.pdf

AUTOMOTIVE GRADE AUIRFS8407-7P Features HEXFET Power MOSFET Advanced Process Technology D New Ultra Low On-Resistance VDSS 40V 175 C Operating Temperature RDS(on) typ.1.0m Fast Switching Repetitive Avalanche Allowed up to Tjmax max. 1.3m Lead-Free, RoHS Compliant G ID (Silicon Limited) 306A Automotive Qualified * Description ID (Package L

 7.8. Size:291K  international rectifier
 auirfs8408 auirfsl8408.pdf

AUIRFS8408 AUTOMOTIVE GRADE AUIRFSL8408 Features HEXFET Power MOSFET l Advanced Process Technology VDSS 40V l New Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) typ. 1.3m l Fast Switching max. 1.6m l Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 317A l Lead-Free, RoHS Compliant l Automotive Qualified * ID (Package Limited) 195A Descri

 7.9. Size:275K  international rectifier
 auirfs8408-7p.pdf

AUIRFS8408-7P AUTOMOTIVE GRADE Features HEXFET Power MOSFET l Advanced Process Technology 40V VDSS l New Ultra Low On-Resistance 0.70m RDS(on) typ. l 175 C Operating Temperature l Fast Switching max. 1.0m l Repetitive Avalanche Allowed up to Tjmax 397A ID (Silicon Limited) l Lead-Free, RoHS Compliant 240A ID (Package Limited) l Automotive Qualified * Description

 7.10. Size:511K  samsung
 irfs840a.pdf

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 0.638 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V

 7.11. Size:822K  blue-rocket-elect
 irfs840.pdf

IRFS840 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency