IRFS840B Specs and Replacement
Type Designator: IRFS840B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ -
Output Capacitance: 145 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO-220F
- MOSFET ⓘ Cross-Reference Search
IRFS840B datasheet
7.2. Size:277K international rectifier
auirfs8403 auirfsl8403.pdf 
AUIRFS8403 AUTOMOTIVE GRADE AUIRFSL8403 HEXFET Power MOSFET Features l Advanced Process Technology D VDSS 40V l New Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) typ. 2.6m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G max. 3.3m l Lead-Free, RoHS Compliant Automotive Qualified * S ID (Silicon Limited) 123A Description Specifically desi... See More ⇒
7.3. Size:277K international rectifier
auirfs8409-7p.pdf
AUIRFS8409-7P AUTOMOTIVE GRADE Features HEXFET Power MOSFET l Advanced Process Technology 40V VDSS l New Ultra Low On-Resistance 0.55m RDS(on) typ. l 175 C Operating Temperature max. 0.75m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax 522A ID (Silicon Limited) l Lead-Free, RoHS Compliant 240A ID (Package Limited) l Automotive Qualified * Description... See More ⇒
7.4. Size:398K international rectifier
auirfb8409 auirfs8409 auirfsl8409.pdf
AUIRFB8409 AUTOMOTIVE GRADE AUIRFS8409 AUIRFSL8409 Features HEXFET Power MOSFET l Advanced Process Technology D l New Ultra Low On-Resistance VDSS 40V l 175 C Operating Temperature RDS(on) (SMD) typ. 0.97m l Fast Switching max. 1.2m l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free, RoHS Compliant ID (Silicon Limited) 409A l Automotive Qualified * ID (Package Li... See More ⇒
7.5. Size:351K international rectifier
auirfs8405 auirfsl8405.pdf
AUIRFS8405 AUTOMOTIVE GRADE AUIRFSL8405 Features HEXFET Power MOSFET l Advanced Process Technology D l New Ultra Low On-Resistance VDSS 40V l 175 C Operating Temperature RDS(on) typ.1.9m l Fast Switching max. 2.3m l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant G ID (Silicon Limited) 193A l Automotive Qualified * ID (Package Limited) 120A S De... See More ⇒
7.6. Size:340K international rectifier
auirfb8407 auirfs8407 auirfsl8407.pdf
AUIRFB8407 AUTOMOTIVE GRADE AUIRFS8407 AUIRFSL8407 Features HEXFET Power MOSFET l Advanced Process Technology l New Ultra Low On-Resistance VDSS 40V D l 175 C Operating Temperature RDS(on) typ. 1.4m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax (SMD version) max. 1.8m l Lead-Free, RoHS Compliant G 250A ID (Silicon Limited) Automotive Qualified * S ... See More ⇒
7.7. Size:220K international rectifier
auirfs8407-7p.pdf
AUTOMOTIVE GRADE AUIRFS8407-7P Features HEXFET Power MOSFET Advanced Process Technology D New Ultra Low On-Resistance VDSS 40V 175 C Operating Temperature RDS(on) typ.1.0m Fast Switching Repetitive Avalanche Allowed up to Tjmax max. 1.3m Lead-Free, RoHS Compliant G ID (Silicon Limited) 306A Automotive Qualified * Description ID (Package L... See More ⇒
7.8. Size:291K international rectifier
auirfs8408 auirfsl8408.pdf
AUIRFS8408 AUTOMOTIVE GRADE AUIRFSL8408 Features HEXFET Power MOSFET l Advanced Process Technology VDSS 40V l New Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) typ. 1.3m l Fast Switching max. 1.6m l Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 317A l Lead-Free, RoHS Compliant l Automotive Qualified * ID (Package Limited) 195A Descri... See More ⇒
7.9. Size:275K international rectifier
auirfs8408-7p.pdf
AUIRFS8408-7P AUTOMOTIVE GRADE Features HEXFET Power MOSFET l Advanced Process Technology 40V VDSS l New Ultra Low On-Resistance 0.70m RDS(on) typ. l 175 C Operating Temperature l Fast Switching max. 1.0m l Repetitive Avalanche Allowed up to Tjmax 397A ID (Silicon Limited) l Lead-Free, RoHS Compliant 240A ID (Package Limited) l Automotive Qualified * Description ... See More ⇒
7.10. Size:511K samsung
irfs840a.pdf
Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 0.638 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V... See More ⇒
7.11. Size:822K blue-rocket-elect
irfs840.pdf
IRFS840 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency ... See More ⇒
Detailed specifications: IRFS7540PBF, IRFS7730PBF, IRFS7730-7PPBF, IRFS7734PBF, IRFS7734-7PPBF, IRFS7762PBF, IRFS7787PBF, IRFS820B, IRFZ48N, IRFS9N60APBF, IRFSL11N50APBF, IRFSL17N20D, IRFSL17N20DPBF, IRFSL23N15D, IRFSL23N15DPBF, IRFSL3004PBF, IRFSL3006PBF
Keywords - IRFS840B MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
