IRFS840B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFS840B
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 44 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 8 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 41 nC
Время нарастания (tr): 65 ns
Выходная емкость (Cd): 145 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.8 Ohm
Тип корпуса: TO-220F
IRFS840B Datasheet (PDF)
irf840b irfs840b.pdf
November 2001IRF840B/IRFS840B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.0A, 500V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to
auirfs8403 auirfsl8403.pdf
AUIRFS8403AUTOMOTIVE GRADEAUIRFSL8403HEXFET Power MOSFETFeaturesl Advanced Process TechnologyDVDSS 40Vl New Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ. 2.6ml Fast Switchingl Repetitive Avalanche Allowed up to TjmaxG max. 3.3ml Lead-Free, RoHS Compliant Automotive Qualified *SID (Silicon Limited) 123ADescriptionSpecifically desi
auirfs8409-7p.pdf
AUIRFS8409-7PAUTOMOTIVE GRADEFeaturesHEXFET Power MOSFETl Advanced Process Technology40VVDSSl New Ultra Low On-Resistance0.55mRDS(on) typ. l 175C Operating Temperature max. 0.75ml Fast Switchingl Repetitive Avalanche Allowed up to Tjmax522AID (Silicon Limited)l Lead-Free, RoHS Compliant240A ID (Package Limited)l Automotive Qualified *Description
auirfb8409 auirfs8409 auirfsl8409.pdf
AUIRFB8409AUTOMOTIVE GRADE AUIRFS8409AUIRFSL8409FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) (SMD) typ. 0.97ml Fast Switching max. 1.2ml Repetitive Avalanche Allowed up to TjmaxGl Lead-Free, RoHS Compliant ID (Silicon Limited) 409Al Automotive Qualified *ID (Package Li
auirfs8405 auirfsl8405.pdf
AUIRFS8405AUTOMOTIVE GRADEAUIRFSL8405FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) typ.1.9ml Fast Switching max. 2.3ml Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS Compliant GID (Silicon Limited) 193Al Automotive Qualified *ID (Package Limited) 120A SDe
auirfb8407 auirfs8407 auirfsl8407.pdf
AUIRFB8407AUTOMOTIVE GRADEAUIRFS8407AUIRFSL8407FeaturesHEXFET Power MOSFETl Advanced Process Technologyl New Ultra Low On-ResistanceVDSS 40VDl 175C Operating TemperatureRDS(on) typ. 1.4ml Fast Switching l Repetitive Avalanche Allowed up to Tjmax(SMD version) max. 1.8m l Lead-Free, RoHS CompliantG250AID (Silicon Limited) Automotive Qualified *S
auirfs8407-7p.pdf
AUTOMOTIVE GRADEAUIRFS8407-7PFeaturesHEXFET Power MOSFET Advanced Process TechnologyD New Ultra Low On-ResistanceVDSS 40V 175C Operating TemperatureRDS(on) typ.1.0m Fast Switching Repetitive Avalanche Allowed up to Tjmax max. 1.3m Lead-Free, RoHS CompliantGID (Silicon Limited) 306A Automotive Qualified *DescriptionID (Package L
auirfs8408 auirfsl8408.pdf
AUIRFS8408AUTOMOTIVE GRADEAUIRFSL8408FeaturesHEXFET Power MOSFETl Advanced Process TechnologyVDSS 40Vl New Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ. 1.3ml Fast Switching max. 1.6ml Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited) 317Al Lead-Free, RoHS Compliantl Automotive Qualified *ID (Package Limited) 195A Descri
auirfs8408-7p.pdf
AUIRFS8408-7PAUTOMOTIVE GRADEFeaturesHEXFET Power MOSFETl Advanced Process Technology40VVDSSl New Ultra Low On-Resistance0.70mRDS(on) typ. l 175C Operating Temperaturel Fast Switching max. 1.0ml Repetitive Avalanche Allowed up to Tjmax397AID (Silicon Limited)l Lead-Free, RoHS Compliant240A ID (Package Limited)l Automotive Qualified *Description
irfs840a.pdf
Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V
auirfs8403 auirfsl8403.pdf
AUIRFS8403AUTOMOTIVE GRADEAUIRFSL8403HEXFET Power MOSFETFeaturesl Advanced Process TechnologyDVDSS 40Vl New Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ. 2.6ml Fast Switchingl Repetitive Avalanche Allowed up to TjmaxG max. 3.3ml Lead-Free, RoHS Compliant Automotive Qualified *SID (Silicon Limited) 123ADescriptionSpecifically desi
auirfs8409-7p.pdf
AUIRFS8409-7PAUTOMOTIVE GRADEFeaturesHEXFET Power MOSFETl Advanced Process Technology40VVDSSl New Ultra Low On-Resistance0.55mRDS(on) typ. l 175C Operating Temperature max. 0.75ml Fast Switchingl Repetitive Avalanche Allowed up to Tjmax522AID (Silicon Limited)l Lead-Free, RoHS Compliant240A ID (Package Limited)l Automotive Qualified *Description
auirfb8409 auirfs8409 auirfsl8409.pdf
AUIRFB8409AUTOMOTIVE GRADE AUIRFS8409AUIRFSL8409FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) (SMD) typ. 0.97ml Fast Switching max. 1.2ml Repetitive Avalanche Allowed up to TjmaxGl Lead-Free, RoHS Compliant ID (Silicon Limited) 409Al Automotive Qualified *ID (Package Li
auirfs8405 auirfsl8405.pdf
AUIRFS8405AUTOMOTIVE GRADEAUIRFSL8405FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) typ.1.9ml Fast Switching max. 2.3ml Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS Compliant GID (Silicon Limited) 193Al Automotive Qualified *ID (Package Limited) 120A SDe
auirfb8407 auirfs8407 auirfsl8407.pdf
AUIRFB8407AUTOMOTIVE GRADEAUIRFS8407AUIRFSL8407FeaturesHEXFET Power MOSFETl Advanced Process Technologyl New Ultra Low On-ResistanceVDSS 40VDl 175C Operating TemperatureRDS(on) typ. 1.4ml Fast Switching l Repetitive Avalanche Allowed up to Tjmax(SMD version) max. 1.8m l Lead-Free, RoHS CompliantG250AID (Silicon Limited) Automotive Qualified *S
auirfs8407-7p.pdf
AUTOMOTIVE GRADEAUIRFS8407-7PFeaturesHEXFET Power MOSFET Advanced Process TechnologyD New Ultra Low On-ResistanceVDSS 40V 175C Operating TemperatureRDS(on) typ.1.0m Fast Switching Repetitive Avalanche Allowed up to Tjmax max. 1.3m Lead-Free, RoHS CompliantGID (Silicon Limited) 306A Automotive Qualified *DescriptionID (Package L
auirfs8408-7p.pdf
AUIRFS8408-7PAUTOMOTIVE GRADEFeaturesHEXFET Power MOSFETl Advanced Process Technology40VVDSSl New Ultra Low On-Resistance0.70mRDS(on) typ. l 175C Operating Temperaturel Fast Switching max. 1.0ml Repetitive Avalanche Allowed up to Tjmax397AID (Silicon Limited)l Lead-Free, RoHS Compliant240A ID (Package Limited)l Automotive Qualified *Description
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