IRFU1N60APBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFU1N60APBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 36 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 1.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 14 nC
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 32.6 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7 Ohm
Paquete / Cubierta: TO-251
Búsqueda de reemplazo de MOSFET IRFU1N60APBF
IRFU1N60APBF Datasheet (PDF)
irfr1n60apbf irfu1n60apbf.pdf
PD - 95518ASMPS MOSFETIRFR1N60APbFIRFU1N60APbFApplicationsHEXFET Power MOSFETl Switch Mode Power Supply (SMPS)VDSS Rds(on) max IDl Uninterruptable Power Supplyl Power Factor Correction600V 7.0 1.4Al Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance
irfr1n60apbf irfu1n60apbf.pdf
PD - 95518ASMPS MOSFETIRFR1N60APbFIRFU1N60APbFApplicationsHEXFET Power MOSFETl Switch Mode Power Supply (SMPS)VDSS Rds(on) max IDl Uninterruptable Power Supplyl Power Factor Correction600V 7.0 1.4Al Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance
irfr1n60a irfu1n60a sihfr1n60a sihfu1n60a.pdf
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) (Max.) ()VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 14RequirementQgs (nC) 2.7 Improved Gate, Avalanche and DynamicQgd (nC) 8.1dV/dt RuggednessConfiguration Sing
irfu1n60a sihfr1n60a sihfu1n60a.pdf
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) (Max.) ()VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 14RequirementQgs (nC) 2.7 Improved Gate, Avalanche and DynamicQgd (nC) 8.1dV/dt RuggednessConfiguration Sing
irfu1n60a.pdf
iscN-Channel MOSFET Transistor IRFU1N60AFEATURESLow drain-source on-resistance:RDS(ON) =7 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918