IRFU1N60APBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFU1N60APBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14 nC
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 32.6 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
Package: TO-251
IRFU1N60APBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFU1N60APBF Datasheet (PDF)
irfr1n60apbf irfu1n60apbf.pdf
PD - 95518ASMPS MOSFETIRFR1N60APbFIRFU1N60APbFApplicationsHEXFET Power MOSFETl Switch Mode Power Supply (SMPS)VDSS Rds(on) max IDl Uninterruptable Power Supplyl Power Factor Correction600V 7.0 1.4Al Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance
irfr1n60apbf irfu1n60apbf.pdf
PD - 95518ASMPS MOSFETIRFR1N60APbFIRFU1N60APbFApplicationsHEXFET Power MOSFETl Switch Mode Power Supply (SMPS)VDSS Rds(on) max IDl Uninterruptable Power Supplyl Power Factor Correction600V 7.0 1.4Al Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance
irfr1n60a irfu1n60a sihfr1n60a sihfu1n60a.pdf
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) (Max.) ()VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 14RequirementQgs (nC) 2.7 Improved Gate, Avalanche and DynamicQgd (nC) 8.1dV/dt RuggednessConfiguration Sing
irfu1n60a sihfr1n60a sihfu1n60a.pdf
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) (Max.) ()VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 14RequirementQgs (nC) 2.7 Improved Gate, Avalanche and DynamicQgd (nC) 8.1dV/dt RuggednessConfiguration Sing
irfu1n60a.pdf
iscN-Channel MOSFET Transistor IRFU1N60AFEATURESLow drain-source on-resistance:RDS(ON) =7 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
