IRFU4104PBF MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRFU4104PBF datasheet

..1. Size:324K international rectifier
irfr4104pbf irfu4104pbf.pdf pdf_icon

PD - 95425B IRFR4104PbF IRFU4104PbF HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 40V l Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) = 5.5m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on

6.1. Size:185K international rectifier
irfu4104.pdf pdf_icon

PD - 94728 IRFR4104 AUTOMOTIVE MOSFET IRFU4104 HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 40V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 5.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID = 42A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes

6.2. Size:715K infineon
auirfr4104 auirfu4104.pdf pdf_icon

AUIRFR4104 AUTOMOTIVE GRADE AUIRFU4104 Features HEXFET Power MOSFET Advanced Process Technology Low On-Resistance VDSS 40V 175 C Operating Temperature RDS(on) max. 5.5m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 119A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D

6.3. Size:261K inchange semiconductor
irfu4104.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFU4104 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

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