IRFU4104PBF - аналоги, даташиты, параметры транзистора

IRFU4104PBF Datasheet (PDF)

..1. Size:324K international rectifier
irfr4104pbf irfu4104pbf.pdf pdf_icon

PD - 95425BIRFR4104PbFIRFU4104PbFHEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 40Vl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) = 5.5ml Fast SwitchingGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on

6.1. Size:185K international rectifier
irfu4104.pdf pdf_icon

PD - 94728IRFR4104AUTOMOTIVE MOSFETIRFU4104HEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 40V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 5.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID = 42ASDescriptionSpecifically designed for Automotive applications, this HEXFETPower MOSFET utilizes

6.2. Size:715K infineon
auirfr4104 auirfu4104.pdf pdf_icon

AUIRFR4104 AUTOMOTIVE GRADE AUIRFU4104 Features HEXFET Power MOSFET Advanced Process Technology Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) max. 5.5m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 119A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D

6.3. Size:261K inchange semiconductor
irfu4104.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFU4104FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

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