All MOSFET. IRFU4104PBF Datasheet

 

IRFU4104PBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFU4104PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 42 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 69 nS
   Cossⓘ - Output Capacitance: 660 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO-251

 IRFU4104PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFU4104PBF Datasheet (PDF)

 ..1. Size:324K  international rectifier
irfr4104pbf irfu4104pbf.pdf

IRFU4104PBF
IRFU4104PBF

PD - 95425BIRFR4104PbFIRFU4104PbFHEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 40Vl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) = 5.5ml Fast SwitchingGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on

 ..2. Size:324K  infineon
irfr4104pbf irfu4104pbf.pdf

IRFU4104PBF
IRFU4104PBF

PD - 95425BIRFR4104PbFIRFU4104PbFHEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 40Vl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) = 5.5ml Fast SwitchingGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on

 6.1. Size:185K  international rectifier
irfu4104.pdf

IRFU4104PBF
IRFU4104PBF

PD - 94728IRFR4104AUTOMOTIVE MOSFETIRFU4104HEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 40V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 5.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID = 42ASDescriptionSpecifically designed for Automotive applications, this HEXFETPower MOSFET utilizes

 6.2. Size:715K  infineon
auirfr4104 auirfu4104.pdf

IRFU4104PBF
IRFU4104PBF

AUIRFR4104 AUTOMOTIVE GRADE AUIRFU4104 Features HEXFET Power MOSFET Advanced Process Technology Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) max. 5.5m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 119A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D

 6.3. Size:261K  inchange semiconductor
irfu4104.pdf

IRFU4104PBF
IRFU4104PBF

isc N-Channel MOSFET Transistor IRFU4104FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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