2SJ518 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ518
Código: AZ
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 2 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5.2 V
Voltaje de corte de la puerta |Vgs(off)|: 1 V
Tiempo de subida (tr): 11 nS
Conductancia de drenaje-sustrato (Cd): 110 pF
Resistencia entre drenaje y fuente RDS(on): 0.46 Ohm
Paquete / Cubierta: UPAK
Búsqueda de reemplazo de MOSFET 2SJ518
2SJ518 Datasheet (PDF)
2sj518.pdf
2SJ518 Silicon P Channel MOS FET REJ03G0875-0400 (Previous: ADE-208-580B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.35 typ. (at VGS = 10 V, ID = 1 A) Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code: PLZZ0004CA-AR(Package name: UPAK )
2sj518.pdf
2SJ518www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.058 at VGS = - 10 V - 6.5APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 5.5 Load SwitchSDGDG D SP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symbol Lim
rej03g0875 2sj518ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sj511.pdf
2SJ511 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSV) 2SJ511 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.32 (typ.) DS (ON) High forward transfer admittance : |Y | = 1.4 S (typ.) fs Low leakage current : IDSS = -100 A (max) (V = -30 V) DS Enhancem
2sj516.pdf
2SJ516 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV) 2SJ516 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.6 (typ.) High forward transfer admittance : |Y | = 5.3 S (typ.) fs Low leakage current : I = -100 A (max) (V = -250 V) DSS DS Enhancement-mode : Vth = -1.5~-3.
2sj512.pdf
2SJ512 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ512 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 1.0 (typ.) High forward transfer admittance : |Y | = 3.7 S (typ.) fs Low leakage current : I = -100 A (max) (V = -250 V) DSS DS Enhancement-mode : Vth = -1.5~
rej03g0874 2sj517ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Otros transistores... 2SJ483 , 2SJ484 , 2SJ486 , 2SJ496 , 2SJ504 , 2SJ505 , 2SJ506 , 2SJ517 , 8N60 , 2SJ526 , 2SJ527 , 2SJ528 , 2SJ529 , 2SJ530 , 2SJ531 , 2SJ532 , 2SJ533 .
History: 12P10G-TA3-T
