2SJ518 - описание и поиск аналогов

2SJ518 Silicon P Channel MOS FET REJ03G0875-0400 (Previous ADE-208-580B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.35 typ. (at VGS = 10 V, ID = 1 A) Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code PLZZ0004CA-A R (Package name UPAK )

2SJ518 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.058 at VGS = - 10 V - 6.5 APPLICATIONS - 60 30 nC 0.065 at VGS = - 4.5 V - 5.5 Load Switch S D G D G D S P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symbol Lim

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SJ511 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSV) 2SJ511 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.32 (typ.) DS (ON) High forward transfer admittance Y = 1.4 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -30 V) DS Enhancem

2SJ516 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ( -MOSV) 2SJ516 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.6 (typ.) High forward transfer admittance Y = 5.3 S (typ.) fs Low leakage current I = -100 A (max) (V = -250 V) DSS DS Enhancement-mode Vth = -1.5 -3.

2SJ512 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- -MOSV) 2SJ512 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 1.0 (typ.) High forward transfer admittance Y = 3.7 S (typ.) fs Low leakage current I = -100 A (max) (V = -250 V) DSS DS Enhancement-mode Vth = -1.5

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.