2SJ518 Datasheet. Specs and Replacement

Type Designator: 2SJ518  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm

Package: UPAK

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2SJ518 datasheet

 ..1. Size:83K  renesas
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2SJ518

2SJ518 Silicon P Channel MOS FET REJ03G0875-0400 (Previous ADE-208-580B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.35 typ. (at VGS = 10 V, ID = 1 A) Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code PLZZ0004CA-A R (Package name UPAK ) ... See More ⇒

 ..2. Size:820K  cn vbsemi
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2SJ518

2SJ518 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.058 at VGS = - 10 V - 6.5 APPLICATIONS - 60 30 nC 0.065 at VGS = - 4.5 V - 5.5 Load Switch S D G D G D S P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symbol Lim... See More ⇒

 0.1. Size:96K  renesas
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2SJ518

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 9.1. Size:416K  toshiba
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2SJ518

2SJ511 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSV) 2SJ511 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.32 (typ.) DS (ON) High forward transfer admittance Y = 1.4 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -30 V) DS Enhancem... See More ⇒

Detailed specifications: 2SJ483, 2SJ484, 2SJ486, 2SJ496, 2SJ504, 2SJ505, 2SJ506, 2SJ517, 60N06, 2SJ526, 2SJ527, 2SJ528, 2SJ529, 2SJ530, 2SJ531, 2SJ532, 2SJ533

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