STD8N80K5 Todos los transistores

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 std8n80k5.pdf

STD8N80K5 N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on)max. ID PTOT STD8N80K5 800 V 0.95 6 A 110 W TAB Worldwide best FOM (figure of merit) 3 Ultra low gate charge 1 100% avalanche tested DPAK Zener protected Applications Switching applications F

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 std8n06-1 std8n06t4.pdf

STD8N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD8N06 60 V

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 std8n10-1 std8n10t4.pdf

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 std8n10l std8n10l-1 std8n10lt4.pdf

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 stb8nm60n std8nm60n-1 stf8nm60n stp8nm60n.pdf

STx8NM60N N-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STB8NM60N 650 V

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 std8n10.pdf

This datasheet has been downloaded from http //www.digchip.com at this page

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 std8nm50n stf8nm50n stp8nm50n stu8nm50n.pdf

STD8NM50N, STF8NM50N STP8NM50N, STU8NM50N N-channel 500 V, 0.73 , 5 A MDmesh II Power MOSFET in DPAK, IPAK, TO-220 and TO-220FP Features Order codes VDSS@TJMAX RDS(on)max. ID 3 3 1 2 STD8NM50N 1 DPAK STF8NM50N IPAK 550 V

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 std8nf25.pdf

STD8NF25 N-channel 250 V, 318 m , 8 A STripFET II Power MOSFET in DPAK package Datasheet production data Features RDS(on) Order code VDSS ID max. STD8NF25 250 V

 9.8. Size:341K  st
 std8n06.pdf

STD8N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD8N06 60 V

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 std8nm60nd stf8nm60nd stp8nm60nd stu8nm60nd.pdf

STD8NM60ND, STF8NM60ND STP8NM60ND, STU8NM60ND N-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STD8NM60ND 650 V

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 std8ns25.pdf

STD8NS25 N-CHANNEL 250V - 0.38 - 8A DPAK MESH OVERLAY MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STD8NS25 250 V

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 stb8n65m5 std8n65m5 stf8n65m5 sti8n65m5 stp8n65m5 stu8n65m5.pdf

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 std8n60dm2.pdf

STD8N60DM2 Datasheet N-channel 600 V, 550 m typ., 8 A, MDmesh DM2 Power MOSFET in a DPAK package Features VDS RDS(on) max. ID PTOT Order code TAB STD8N60DM2 600 V 600 m 8 A 85 W 3 2 1 Fast-recovery body diode DPAK Extremely low gate charge and input capacitance Low on-resistance D(2, TAB) 100% avalanche tested Extremely high dv/dt ruggedness Ze

 9.13. Size:698K  st
 stf8nm60n std8nm60n stb8nm60n stp8nm60n.pdf

STx8NM60N N-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STB8NM60N 650 V

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 stb8n65m5 std8n65m5 stf8n65m5 stu8n65m5 stp8n65m5 sti8n65m5.pdf

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 stp8nm60n stf8nm60n std8nm60n stb8nm60n.pdf

STx8NM60N N-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STB8NM60N 650 V