STD8N80K5 MOSFET. Datasheet pdf. Equivalent
Type Designator: STD8N80K5
Marking Code: 8N80K5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16.5 nC
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 50 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: DPAK
STD8N80K5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD8N80K5 Datasheet (PDF)
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