STD8N80K5 Datasheet. Specs and Replacement
Type Designator: STD8N80K5 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: DPAK
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STD8N80K5 substitution
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STD8N80K5 datasheet
std8n80k5.pdf
STD8N80K5 N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on)max. ID PTOT STD8N80K5 800 V 0.95 6 A 110 W TAB Worldwide best FOM (figure of merit) 3 Ultra low gate charge 1 100% avalanche tested DPAK Zener protected Applications Switching applications F... See More ⇒
std8n06-1 std8n06t4.pdf
STD8N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD8N06 60 V ... See More ⇒
Detailed specifications: STD7NM50N, STD7NM50N-1, STD7NM64N, STD7NS20-1, STD7NS20T4, STD80N10F7, STD80N4F6, STD80N6F6, SKD502T, STD8NF25, STD8NM60N-1, STD90N02L, STD90N02L-1, STD90NH02LT4, STD95N04, STD95NH02LT4, STD96N3LLH6
Keywords - STD8N80K5 MOSFET specs
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