2SJ526 Todos los transistores

 ..1. Size:91K  renesas
 2sj526.pdf

2SJ526 Silicon P Channel MOS FET REJ03G0876-0600 Rev.6.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 0.11 typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D 1. Gate G 2. Drain 3. Source 1 2 3 S Rev.6.00 Ju

 ..2. Size:254K  inchange semiconductor
 2sj526.pdf

isc P-Channel MOSFET Transistor 2SJ526 FEATURES Drain-source on-resistance RDS(on) 110m @10V Fast Switching Speed Low drive current 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High fast switching Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-S

 0.1. Size:104K  renesas
 rej03g0876 2sj526ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:142K  toshiba
 2sj525.pdf

2SJ525 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSV) 2SJ525 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.1 (typ.) DS (ON) High forward transfer admittance Y = 4.5 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -30 V) DS Enhancem

 9.2. Size:44K  sanyo
 2sj520.pdf

Ordering number ENN6435 P-Channel Silicon MOSFET 2SJ520 Load Switching Applications Features Package Dimensions Low ON resistance. unit mm 2.5V drive. 2083B [2SJ520] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 2 Drain 1 2 3 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SJ520] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1.2 1 Gate 0 to 0.2

 9.3. Size:94K  renesas
 2sj527.pdf

2SJ527(L), 2SJ527(S) Silicon P Channel MOS FET REJ03G0877-0300 (Previous ADE-208-640A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.3 typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code PRSS0004ZD-A RENESAS Package code PRSS0004ZD-C (Package n

 9.4. Size:94K  renesas
 2sj528.pdf

2SJ528(L), 2SJ528(S) Silicon P Channel MOS FET REJ03G0878-0300 (Previous ADE-208-641A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.17 typ. 4 V gate drive devices High speed switching Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package name DPAK (L)-(2) ) (Pa

 9.5. Size:108K  renesas
 rej03g0878 2sj528lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.6. Size:107K  renesas
 rej03g0877 2sj527lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.7. Size:108K  renesas
 rej03g0879 2sj529lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.8. Size:94K  renesas
 2sj529.pdf

2SJ529(L), 2SJ529(S) Silicon P Channel MOS FET REJ03G0879-0300 (Previous ADE-208-654A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.12 typ. 4 V gate drive devices High speed switching Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package name DPAK (L)-(2) ) (Pa

 9.9. Size:1426K  cn vbsemi
 2sj529stl.pdf

2SJ529STL www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Sym

 9.10. Size:838K  cn vbsemi
 2sj520.pdf

2SJ520 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.033 at VGS = - 10 V - 26 100 % Rg Tested RoHS - 30 19 nC COMPLIANT 100 % UIS Tested 0.046 at VGS = - 4.5 V - 21 APPLICATIONS Load Switch Notebook Adaptor Switch S TO-252 G G D S D Top View P-Chan

 9.11. Size:831K  cn vbsemi
 2sj529s.pdf

2SJ529S www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symbo

 9.12. Size:212K  inchange semiconductor
 2sj529s.pdf

INCHANGE Semiconductor isc P-Channel MOSFET Transistor 2SJ529S FEATURES With TO-252(DPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY