Справочник MOSFET. 2SJ526

 

2SJ526 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SJ526

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 25 W

Предельно допустимое напряжение сток-исток (Uds): 60 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 12 A

Максимальная температура канала (Tj): 150 °C

Выходная емкость (Cd): 600 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.16 Ohm

Тип корпуса: TO220FM

Аналог (замена) для 2SJ526

 

 

2SJ526 Datasheet (PDF)

1.1. rej03g0876 2sj526ds.pdf Size:104K _renesas

2SJ526
2SJ526

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.2. 2sj526.pdf Size:91K _renesas

2SJ526
2SJ526

2SJ526 Silicon P Channel MOS FET REJ03G0876-0600 Rev.6.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 0.11 ? typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D 1. Gate G 2. Drain 3. Source 1 2 3 S Rev.6.00 Jun 05, 2006 pa

 5.1. 2sj525.pdf Size:142K _toshiba

2SJ526
2SJ526

2SJ525 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSV) 2SJ525 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.1 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 4.5 S (typ.) fs Low leakage current : IDSS = -100 µA (max) (V = -30 V) DS Enhancement

5.2. 2sj520.pdf Size:44K _sanyo

2SJ526
2SJ526

Ordering number:ENN6435 P-Channel Silicon MOSFET 2SJ520 Load Switching Applications Features Package Dimensions Low ON resistance. unit:mm 2.5V drive. 2083B [2SJ520] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ520] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1.2 1 : Gate 0 to 0.2 2 :

 5.3. rej03g0879 2sj529lsds.pdf Size:108K _renesas

2SJ526
2SJ526

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.4. 2sj527.pdf Size:94K _renesas

2SJ526
2SJ526

2SJ527(L), 2SJ527(S) Silicon P Channel MOS FET REJ03G0877-0300 (Previous: ADE-208-640A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.3 ? typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code: PRSS0004ZD-A RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (L)

 5.5. rej03g0877 2sj527lsds.pdf Size:107K _renesas

2SJ526
2SJ526

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.6. 2sj528.pdf Size:94K _renesas

2SJ526
2SJ526

2SJ528(L), 2SJ528(S) Silicon P Channel MOS FET REJ03G0878-0300 (Previous: ADE-208-641A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.17 ? typ. 4 V gate drive devices High speed switching Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (L)-(2) ) (Package name:

5.7. rej03g0878 2sj528lsds.pdf Size:108K _renesas

2SJ526
2SJ526

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.8. 2sj529.pdf Size:94K _renesas

2SJ526
2SJ526

2SJ529(L), 2SJ529(S) Silicon P Channel MOS FET REJ03G0879-0300 (Previous: ADE-208-654A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.12 ? typ. 4 V gate drive devices High speed switching Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (L)-(2) ) (Package name:

5.9. 2sj529s.pdf Size:212K _inchange_semiconductor

2SJ526
2SJ526

INCHANGE Semiconductor isc P-Channel MOSFET Transistor 2SJ529S ·FEATURES ·With TO-252(DPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SY

Другие MOSFET... 2SJ484 , 2SJ486 , 2SJ496 , 2SJ504 , 2SJ505 , 2SJ506 , 2SJ517 , 2SJ518 , 40673 , 2SJ527 , 2SJ528 , 2SJ529 , 2SJ530 , 2SJ531 , 2SJ532 , 2SJ533 , 2SJ534 .

 

 
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Список транзисторов

Обновления

MOSFET: WFD5N65L | W15NK90Z | VN1206N5 | TK13A60W | SUP70060E | STP140N6F7 | STH140N6F7 | STD140N6F7 | SIHG47N60AEF | R6018JNX | PSMN3R7-100BSE | P75NF75 | NVD4C05NT4G | NTHL040N65S3F | MTD300N20J3 |
 

 

 

 

 
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