2SJ526 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ526
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 25 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 600 pF
Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
Package: TO220FM
2SJ526 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ526 Datasheet (PDF)
1.1. 2sj526.pdf 
Size:91K _renesas
2SJ526 Silicon P Channel MOS FET REJ03G0876-0600 Rev.6.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 0.11 ? typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D 1. Gate G 2. Drain 3. Source 1 2 3 S Rev.6.00 Jun 05, 2006 pa
1.2. rej03g0876 2sj526ds.pdf Size:104K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re
5.1. 2sj525.pdf Size:142K _toshiba
2SJ525 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSV) 2SJ525 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.1 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 4.5 S (typ.) fs Low leakage current : IDSS = -100 µA (max) (V = -30 V) DS Enhancement
5.2. 2sj520.pdf Size:44K _sanyo
Ordering number:ENN6435 P-Channel Silicon MOSFET 2SJ520 Load Switching Applications Features Package Dimensions Low ON resistance. unit:mm 2.5V drive. 2083B [2SJ520] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ520] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1.2 1 : Gate 0 to 0.2 2 :
5.3. rej03g0879 2sj529lsds.pdf Size:108K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re
5.4. 2sj527.pdf Size:94K _renesas
2SJ527(L), 2SJ527(S) Silicon P Channel MOS FET REJ03G0877-0300 (Previous: ADE-208-640A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.3 ? typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code: PRSS0004ZD-A RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (L)
5.5. rej03g0878 2sj528lsds.pdf Size:108K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re
5.6. rej03g0877 2sj527lsds.pdf Size:107K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re
5.7. 2sj528.pdf Size:94K _renesas
2SJ528(L), 2SJ528(S) Silicon P Channel MOS FET REJ03G0878-0300 (Previous: ADE-208-641A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.17 ? typ. 4 V gate drive devices High speed switching Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (L)-(2) ) (Package name:
5.8. 2sj529.pdf Size:94K _renesas
2SJ529(L), 2SJ529(S) Silicon P Channel MOS FET REJ03G0879-0300 (Previous: ADE-208-654A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.12 ? typ. 4 V gate drive devices High speed switching Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (L)-(2) ) (Package name:
Datasheet: 2SJ484 , 2SJ486 , 2SJ496 , 2SJ504 , 2SJ505 , 2SJ506 , 2SJ517 , 2SJ518 , 40673 , 2SJ527 , 2SJ528 , 2SJ529 , 2SJ530 , 2SJ531 , 2SJ532 , 2SJ533 , 2SJ534 .
