IRFY9230 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFY9230
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 75 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 31 nC
trⓘ - Tiempo de subida: 100 nS
Cossⓘ - Capacitancia de salida: 200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
Paquete / Cubierta: TO-257AA
Búsqueda de reemplazo de MOSFET IRFY9230
IRFY9230 Datasheet (PDF)
irfy9230.pdf
IRFY9230MECHANICAL DATAPCHANNELDimensions in mm (inches)POWER MOSFET4.83 (0.190)5.08 (0.200)10.41 (0.410)10.67 (0.420)0.89 (0.035)FOR HIREL1.14 (0.045)APPLICATIONS3.56 (0.140)Dia.3.81 (0.150)VDSS 200V1 2 3ID(cont) 6.5ARDS(on) 0.800.64 (0.025)Dia.0.89 (0.035)2.54 (0.100) 3.05 (0.120)BSC BSCFEATURES HERMETICALLY SEALED T
irfy9240m.pdf
PD - 94199IRFY9240,IRFY9240MPOWER MOSFET200V, P-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number Rds(on) Id EyeletsIRFY9240 0.51 -9.4A GlassIRFY9240M 0.51 -9.4A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very lo
irfy9240c.pdf
PD - 91295BIRFY9240C,IRFY9240CMPOWER MOSFET200V, P-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number Rds(on) Id EyeletsIRFY9240C 0.51 -9.4A CeramicIRFY9240CM 0.51 -9.4A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieve
irfy9240cm.pdf
PD - 91295BIRFY9240C,IRFY9240CMPOWER MOSFET200V, P-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number Rds(on) Id EyeletsIRFY9240C 0.51 -9.4A CeramicIRFY9240CM 0.51 -9.4A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieve
irfy9240.pdf
PD - 94199IRFY9240,IRFY9240MPOWER MOSFET200V, P-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number Rds(on) Id EyeletsIRFY9240 0.51 -9.4A GlassIRFY9240M 0.51 -9.4A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very lo
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918