IRFY9230 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFY9230

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 75 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 6.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 31 nC

Tiempo de elevación (tr): 100 nS

Conductancia de drenaje-sustrato (Cd): 200 pF

Resistencia drenaje-fuente RDS(on): 0.8 Ohm

Empaquetado / Estuche: TO-257AA

Búsqueda de reemplazo de MOSFET IRFY9230

IRFY9230 Datasheet (PDF)

1.1. irfy9230.pdf Size:50K _update

IRFY9230 MECHANICAL DATA P–CHANNEL Dimensions in mm (inches) POWER MOSFET 4.83 (0.190) 5.08 (0.200) 10.41 (0.410) 10.67 (0.420) 0.89 (0.035) FOR HI–REL 1.14 (0.045) APPLICATIONS 3.56 (0.140) Dia. 3.81 (0.150) VDSS – 200V 1 2 3 ID(cont) – 6.5A Ω RDS(on) 0.80Ω 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) 3.05 (0.120) BSC BSC FEATURES • HERMETICALLY SEALED T

4.1. irfy9240cm.pdf Size:144K _update

PD - 91295B IRFY9240C,IRFY9240CM POWER MOSFET 200V, P-CHANNEL ® THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number Rds(on) Id Eyelets IRFY9240C 0.51 Ω -9.4A Ceramic IRFY9240CM 0.51 Ω -9.4A Ceramic HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieve

4.2. irfy9240m.pdf Size:141K _update

PD - 94199 IRFY9240,IRFY9240M POWER MOSFET 200V, P-CHANNEL ® THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number Rds(on) Id Eyelets IRFY9240 0.51 Ω -9.4A Glass IRFY9240M 0.51 Ω -9.4A Glass HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very lo

4.3. irfy9240cm.pdf Size:137K _international_rectifier

Provisional Data Sheet No. PD 9.1295A IRFY9240CM HEXFET� POWER MOSFET P-CHANNEL -200 Volt, 0.51? HEXFET Product Summary International Rectifier�s HEXFET technology is the key to Part Number BVDSS RDS(on) ID its advanced line of power MOSFET transistors. The effi- cient geometry design achieves very low on-state resis- IRFY9240CM -200V 0.51? -9.4A tance combined with high transconductance

4.4. irfy9240c.pdf Size:145K _international_rectifier

PD - 91295B IRFY9240C,IRFY9240CM POWER MOSFET 200V, P-CHANNEL � THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number Rds(on) Id Eyelets IRFY9240C 0.51 ? -9.4A Ceramic IRFY9240CM 0.51 ? -9.4A Ceramic HEXFET� MOSFET technology is the key to International Rectifier�s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low

4.5. irfy9240.pdf Size:143K _international_rectifier

PD - 94199 IRFY9240,IRFY9240M POWER MOSFET 200V, P-CHANNEL � THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number Rds(on) Id Eyelets IRFY9240 0.51 ? -9.4A Glass IRFY9240M 0.51 ? -9.4A Glass HEXFET� MOSFET technology is the key to International Rectifier�s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low on-state

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

Liste

Recientemente añadidas las descripciónes de los transistores: