IRFY9230 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRFY9230
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 31 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-257AA

IRFY9230 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFY9230 Datasheet (PDF)

..1. Size:50K semelab
irfy9230.pdf

IRFY9230MECHANICAL DATAPCHANNELDimensions in mm (inches)POWER MOSFET4.83 (0.190)5.08 (0.200)10.41 (0.410)10.67 (0.420)0.89 (0.035)FOR HIREL1.14 (0.045)APPLICATIONS3.56 (0.140)Dia.3.81 (0.150)VDSS 200V1 2 3ID(cont) 6.5ARDS(on) 0.800.64 (0.025)Dia.0.89 (0.035)2.54 (0.100) 3.05 (0.120)BSC BSCFEATURES HERMETICALLY SEALED T

8.1. Size:141K international rectifier
irfy9240m.pdf

PD - 94199IRFY9240,IRFY9240MPOWER MOSFET200V, P-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number Rds(on) Id EyeletsIRFY9240 0.51 -9.4A GlassIRFY9240M 0.51 -9.4A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very lo

8.2. Size:145K international rectifier
irfy9240c.pdf

PD - 91295BIRFY9240C,IRFY9240CMPOWER MOSFET200V, P-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number Rds(on) Id EyeletsIRFY9240C 0.51 -9.4A CeramicIRFY9240CM 0.51 -9.4A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieve

8.3. Size:144K international rectifier
irfy9240cm.pdf