IRHNA57260 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRHNA57260
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 55 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 125 nS
   Cossⓘ - Capacitancia de salida: 910 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.043 Ohm
   Paquete / Cubierta: SMD-2

Búsqueda de reemplazo de MOSFET IRHNA57260

IRHNA57260 Datasheet (PDF)

..1. Size:106K international rectifier
irhna57260.pdf

PD - 91838ERADIATION HARDENED IRHNA57260POWER MOSFET200V, N-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGY44 #cProduct Summary Part Number Radiation Level RDS(on) ID IRHNA57260 100K Rads (Si) 0.043 55A IRHNA53260 300K Rads (Si) 0.043 55A IRHNA54260 600K Rads (Si) 0.043 55A IRHNA58260 1000K Rads (Si) 0.048 55ASMD-2International Rectifiers R5TM technology

0.1. Size:122K international rectifier
irhna57260se.pdf

PD - 91839FRADIATION HARDENED IRHNA57260SEPOWER MOSFET200V, N-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHNA57260SE 100K Rads (Si) 0.038 55ASMD-2International Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-Features:cations. These devices have been characterized for

5.1. Size:145K international rectifier
irhna57264se.pdf

PD - 93816BRADIATION HARDENED IRHNA57264SEPOWER MOSFET250V, N-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGY44# ccProduct Summary Part Number Radiation Level RDS(on) ID IRHNA57264SE 100K Rads (Si) 0.06 49ASMD-2International Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-Features:cations. These devices have been characterized f

7.1. Size:105K international rectifier
irhna57z60.pdf

PD - 91787ERADIATION HARDENED IRHNA57Z60POWER MOSFET30V, N-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGY44#cProduct Summary Part Number Radiation Level RDS(on) ID IRHNA57Z60 100K Rads (Si) 0.0035 75*A IRHNA53Z60 300K Rads (Si) 0.0035 75*A IRHNA54Z60 600K Rads (Si) 0.0035 75*A IRHNA58Z60 1000K Rads (Si) 0.0040 75*ASMD-2International Rectifiers R5TM technolo

7.2. Size:132K international rectifier
irhna57160.pdf

PD - 91860FRADIATION HARDENED IRHNA57160POWER MOSFET100V, N-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHNA57160 100K Rads (Si) 0.012 75*A IRHNA53160 300K Rads (Si) 0.012 75*A IRHNA54160 600K Rads (Si) 0.012 75*A IRHNA58160 1000K Rads (Si) 0.013 75*ASMD-2International Rectifiers R5TM technol

7.3. Size:98K international rectifier
irhna57064.pdf

PD - 91852REPETITIVE AVALANCHE AND dv/dt RATED IRHNA57064MOSFET TRANSISTOR IRHNA58064N - CHANNELMEGA RAD HARD Product Summary60Volt, 0.0056, MEGA RAD HARD MOSFETInternational Rectifiers RAD HARD technology Part Number BVDSS RDS(on) IDMOSFETs demonstrate immunity to SEE failure. Ad-IRHNA57064 60V 0.0056 75*Aditionally, under identical pre- and p

7.4. Size:147K international rectifier
irhna57163se.pdf

PD - 93856ARADIATION HARDENED IRHNA57163SEPOWER MOSFET130V, N-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGY44# ccProduct Summary Part Number Radiation Level RDS(on) ID IRHNA57163SE 100K Rads (Si) 0.0135 75A*SMD-2International Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-Features:cations. These devices have been characterize

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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