IRHNA57260 Datasheet. Specs and Replacement

Type Designator: IRHNA57260

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 125 nS

Cossⓘ - Output Capacitance: 910 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm

Package: SMD-2

IRHNA57260 substitution

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IRHNA57260 datasheet

 ..1. Size:106K  international rectifier
 irhna57260.pdf pdf_icon

IRHNA57260

PD - 91838E RADIATION HARDENED IRHNA57260 POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY 4 4 # c Product Summary Part Number Radiation Level RDS(on) ID IRHNA57260 100K Rads (Si) 0.043 55A IRHNA53260 300K Rads (Si) 0.043 55A IRHNA54260 600K Rads (Si) 0.043 55A IRHNA58260 1000K Rads (Si) 0.048 55A SMD-2 International Rectifier s R5TM technology ... See More ⇒

 0.1. Size:122K  international rectifier
 irhna57260se.pdf pdf_icon

IRHNA57260

PD - 91839F RADIATION HARDENED IRHNA57260SE POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHNA57260SE 100K Rads (Si) 0.038 55A SMD-2 International Rectifier s R5TM technology provides high performance power MOSFETs for space appli- Features cations. These devices have been characterized for... See More ⇒

 5.1. Size:145K  international rectifier
 irhna57264se.pdf pdf_icon

IRHNA57260

PD - 93816B RADIATION HARDENED IRHNA57264SE POWER MOSFET 250V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY 4 4# c c Product Summary Part Number Radiation Level RDS(on) ID IRHNA57264SE 100K Rads (Si) 0.06 49A SMD-2 International Rectifier s R5TM technology provides high performance power MOSFETs for space appli- Features cations. These devices have been characterized f... See More ⇒

 7.1. Size:105K  international rectifier
 irhna57z60.pdf pdf_icon

IRHNA57260

PD - 91787E RADIATION HARDENED IRHNA57Z60 POWER MOSFET 30V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHNA57Z60 100K Rads (Si) 0.0035 75*A IRHNA53Z60 300K Rads (Si) 0.0035 75*A IRHNA54Z60 600K Rads (Si) 0.0035 75*A IRHNA58Z60 1000K Rads (Si) 0.0040 75*A SMD-2 International Rectifier s R5TM technolo... See More ⇒

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Detailed specifications: IRHLNM87Y20, IRHLQ77214, IRHLUBC7970Z4, IRHLUC7670Z4, IRHLUC770Z4, IRHLUC7970Z4, IRHLYS77034CM, IRHLYS797034CM, 2N7002, IRHNA597160, IRHNA67160, IRHNA67164, IRHNA67260, IRHNA67264, IRHNA7264SE, IRHNA7360SE, IRHNA7460SE

Keywords - IRHNA57260 MOSFET specs

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