IRHNA57260 - описание и поиск аналогов

PD - 91838E RADIATION HARDENED IRHNA57260 POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY 4 4 # c Product Summary Part Number Radiation Level RDS(on) ID IRHNA57260 100K Rads (Si) 0.043 55A IRHNA53260 300K Rads (Si) 0.043 55A IRHNA54260 600K Rads (Si) 0.043 55A IRHNA58260 1000K Rads (Si) 0.048 55A SMD-2 International Rectifier s R5TM technology

PD - 91839F RADIATION HARDENED IRHNA57260SE POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHNA57260SE 100K Rads (Si) 0.038 55A SMD-2 International Rectifier s R5TM technology provides high performance power MOSFETs for space appli- Features cations. These devices have been characterized for

PD - 93816B RADIATION HARDENED IRHNA57264SE POWER MOSFET 250V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY 4 4# c c Product Summary Part Number Radiation Level RDS(on) ID IRHNA57264SE 100K Rads (Si) 0.06 49A SMD-2 International Rectifier s R5TM technology provides high performance power MOSFETs for space appli- Features cations. These devices have been characterized f

PD - 91787E RADIATION HARDENED IRHNA57Z60 POWER MOSFET 30V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHNA57Z60 100K Rads (Si) 0.0035 75*A IRHNA53Z60 300K Rads (Si) 0.0035 75*A IRHNA54Z60 600K Rads (Si) 0.0035 75*A IRHNA58Z60 1000K Rads (Si) 0.0040 75*A SMD-2 International Rectifier s R5TM technolo

PD - 91860F RADIATION HARDENED IRHNA57160 POWER MOSFET 100V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHNA57160 100K Rads (Si) 0.012 75*A IRHNA53160 300K Rads (Si) 0.012 75*A IRHNA54160 600K Rads (Si) 0.012 75*A IRHNA58160 1000K Rads (Si) 0.013 75*A SMD-2 International Rectifier s R5TM technol

PD - 91852 REPETITIVE AVALANCHE AND dv/dt RATED IRHNA57064 MOSFET TRANSISTOR IRHNA58064 N - CHANNEL MEGA RAD HARD Product Summary 60Volt, 0.0056 , MEGA RAD HARD MOSFET International Rectifier s RAD HARD technology Part Number BVDSS RDS(on) ID MOSFETs demonstrate immunity to SEE failure. Ad- IRHNA57064 60V 0.0056 75*A ditionally, under identical pre- and p

PD - 93856A RADIATION HARDENED IRHNA57163SE POWER MOSFET 130V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY 4 4# c c Product Summary Part Number Radiation Level RDS(on) ID IRHNA57163SE 100K Rads (Si) 0.0135 75A* SMD-2 International Rectifier s R5TM technology provides high performance power MOSFETs for space appli- Features cations. These devices have been characterize