IRHNA67164 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRHNA67164

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 56 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 170 nS

Cossⓘ - Capacitancia de salida: 1144 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm

Encapsulados: SMD-2

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IRHNA67164 datasheet

 ..1. Size:192K  international rectifier
 irhna67164.pdf pdf_icon

IRHNA67164

PD-96959B 2N7581U2 RADIATION HARDENED IRHNA67164 POWER MOSFET 150V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNA67164 100K Rads (Si) 0.018 56A* IRHNA63164 300K Rads (Si) 0.018 56A* SMD-2 International Rectifier s R6TM technology provides superior power MOSFETs for space applications. Features These devices have

 5.1. Size:188K  international rectifier
 irhna67160.pdf pdf_icon

IRHNA67164

PD-94299C 2N7579U2 RADIATION HARDENED IRHNA67160 POWER MOSFET 100V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNA67160 100K Rads (Si) 0.010 56A* IRHNA63160 300K Rads (Si) 0.010 56A* SMD-2 International Rectifier s R6TM technology provides superior power MOSFETs for space applications. Features These devices have

 7.1. Size:198K  international rectifier
 irhna67260.pdf pdf_icon

IRHNA67164

PD-94342G 2N7583U2 RADIATION HARDENED IRHNA67260 POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNA67260 100K Rads (Si) 0.028 56A* IRHNA63260 300K Rads (Si) 0.028 56A* SMD-2 International Rectifier s R6TM technology provides Features superior power MOSFETs for space applications. n Low RDS(on) The

 7.2. Size:190K  international rectifier
 irhna67264.pdf pdf_icon

IRHNA67164

PD-96990A 2N7585U2 RADIATION HARDENED IRHNA67264 POWER MOSFET 250V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNA67264 100K Rads (Si) 0.040 50A IRHNA63264 300K Rads (Si) 0.040 50A SMD-2 International Rectifier s R6TM technology provides superior power MOSFETs for space applications. Features These devices have i

MOSTRAR MÁS

Otros transistores... IRHLUC7670Z4, IRHLUC770Z4, IRHLUC7970Z4, IRHLYS77034CM, IRHLYS797034CM, IRHNA57260, IRHNA597160, IRHNA67160, IRLB4132, IRHNA67260, IRHNA67264, IRHNA7264SE, IRHNA7360SE, IRHNA7460SE, IRHNA7Z60, IRHNB7264SE, IRHNJ57234SE