IRHNA67164 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRHNA67164

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 250 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 56 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 230 nC

Rise Time (tr): 170 nS

Drain-Source Capacitance (Cd): 1144 pF

Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm

Package: SMD-2

IRHNA67164 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRHNA67164 Datasheet (PDF)

1.1. irhna67160.pdf Size:188K _update

PD-94299C 2N7579U2 RADIATION HARDENED IRHNA67160 POWER MOSFET 100V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNA67160 100K Rads (Si) 0.010Ω 56A* IRHNA63160 300K Rads (Si) 0.010Ω 56A* SMD-2 International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. Features: These devices have

1.2. irhna67164.pdf Size:192K _update

PD-96959B 2N7581U2 RADIATION HARDENED IRHNA67164 POWER MOSFET 150V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNA67164 100K Rads (Si) 0.018Ω 56A* IRHNA63164 300K Rads (Si) 0.018Ω 56A* SMD-2 International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. Features: These devices have

1.3. irhna67160.pdf Size:188K _international_rectifier