All MOSFET. IRHNA67164 Datasheet

 

IRHNA67164 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRHNA67164

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 250 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 56 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 230 nC

Rise Time (tr): 170 nS

Drain-Source Capacitance (Cd): 1144 pF

Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm

Package: SMD-2

IRHNA67164 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRHNA67164 Datasheet (PDF)

1.1. irhna67160.pdf Size:188K _update

IRHNA67164
IRHNA67164

PD-94299C 2N7579U2 RADIATION HARDENED IRHNA67160 POWER MOSFET 100V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNA67160 100K Rads (Si) 0.010Ω 56A* IRHNA63160 300K Rads (Si) 0.010Ω 56A* SMD-2 International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. Features: These devices have

1.2. irhna67164.pdf Size:192K _update

IRHNA67164
IRHNA67164

PD-96959B 2N7581U2 RADIATION HARDENED IRHNA67164 POWER MOSFET 150V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNA67164 100K Rads (Si) 0.018Ω 56A* IRHNA63164 300K Rads (Si) 0.018Ω 56A* SMD-2 International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. Features: These devices have

 3.1. irhna67264.pdf Size:190K _update

IRHNA67164
IRHNA67164

PD-96990A 2N7585U2 RADIATION HARDENED IRHNA67264 POWER MOSFET 250V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNA67264 100K Rads (Si) 0.040Ω 50A IRHNA63264 300K Rads (Si) 0.040Ω 50A SMD-2 International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. Features: These devices have i

3.2. irhna67260.pdf Size:198K _update

IRHNA67164
IRHNA67164

PD-94342G 2N7583U2 RADIATION HARDENED IRHNA67260 POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNA67260 100K Rads (Si) 0.028Ω 56A* IRHNA63260 300K Rads (Si) 0.028Ω 56A* SMD-2 International Rectifier’s R6TM technology provides Features: superior power MOSFETs for space applications. n Low RDS(on) The

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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