IRHNA7Z60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRHNA7Z60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 421 nC
   trⓘ - Tiempo de subida: 370 nS
   Cossⓘ - Capacitancia de salida: 4800 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: SMD-2

Búsqueda de reemplazo de MOSFET IRHNA7Z60

IRHNA7Z60 Datasheet (PDF)

..1. Size:121K international rectifier
irhna7z60.pdf

PD - 91708BRADIATION HARDENEDIRHNA7Z60POWER MOSFET30V, N-CHANNELSURFACE MOUNT(SMD-2) RAD-Hard HEXFET TECHNOLOGYProduct SummaryPart Number Radiation Level RDS(on) ID IRHNA7Z60 100K Rads (Si) 0.009 75*A IRHNA3Z60 300K Rads (Si) 0.009 75*A IRHNA4Z60 600K Rads (Si) 0.009 75*A IRHNA8Z60 1000K Rads (Si) 0.009 75*ASMD-2International Rectifiers RADHard HE

8.1. Size:178K international rectifier
irhna7360se.pdf

PD-91398BRADIATION HARDENED IRHNA7360SEPOWER MOSFET 400V, N-CHANNELSURFACE MOUNT (SMD-2) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) I D IRHNA7360SE 100K Rads (Si) 0.20 24ASMD-2International Rectifiers RADHardTM HEXFET MOSFETtechnology provides high performance power MOSFETsFeatures:for space applications. This technology ha

8.2. Size:119K international rectifier
irhna7264se.pdf

PD - 91432CRADIATION HARDENED IRHNA7264SEPOWER MOSFET 250V, N-CHANNELSURFACE MOUNT (SMD-2) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) I D IRHNA7264SE 100K Rads (Si) 0.11 34ASMD-2International Rectifiers RADHardTM HEXFET MOSFETtechnology provides high performance power MOSFETsFeatures:for space applications. This technology

8.3. Size:124K international rectifier
irhna7064.pdf

PD - 91416BIRHNA7064JANSR2N7431URADIATION HARDENED60V, N-CHANNELPOWER MOSFETREF: MIL-PRF-19500/664SURFACE MOUNT(SMD-2) RAD Hard HEXFET TECHNOLOGYProduct SummaryPart Number Radiation Level RDS(on) ID QPL Part Number IRHNA7064 100K Rads (Si) 0.015 75*A JANSR2N7431U IRHNA3064 300K Rads (Si) 0.015 75*A JANSF2N7431U IRHNA4064 600K Rads (Si) 0.015 75*A JANSG2N7

8.4. Size:107K international rectifier
irhna7160.pdf

PD - 91396CIRHNA7160 100V, N-CHANNELRADIATION HARDENEDREF: MIL-PRF-19500/664POWER MOSFETRAD-Hard HEXFETSURFACE MOUNT (SMD-2) MOSFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNA7160 100K Rads (Si) 0.04 51A JANSR2N7432U IRHNA3160 300K Rads (Si) 0.04 51A JANSF2N7432U IRHNA4160 600K Rads (Si) 0.04 51A JANSG2N7432U I

8.5. Size:127K international rectifier
irhna7460se.pdf

PD - 91399BRADIATION HARDENED IRHNA7460SEPOWER MOSFET 500V, N-CHANNELSURFACE MOUNT (SMD-2) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) I D IRHNA7460SE 100K Rads (Si) 0.32 20ASMD-2International Rectifiers RADHardTM HEXFET MOSFETtechnology provides high performance power MOSFETsfor space applications. This technology has over a

8.6. Size:105K international rectifier
irhna7260.pdf

PD - 91397BIRHNA7260 200V, N-CHANNELRADIATION HARDENEDREF: MIL-PRF-19500/664POWER MOSFETRAD-Hard HEXFETSURFACE MOUNT (SMD-2) MOSFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNA7260 100K Rads (Si) 0.07 43A JANSR2N7433U IRHNA3260 300K Rads (Si) 0.07 43A JANSF2N7433U IRHNA4260 600K Rads (Si) 0.07 43A JANSG2N7433U I

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: GSM2311A

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