IRHNA7Z60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 91708BRADIATION HARDENEDIRHNA7Z60POWER MOSFET30V, N-CHANNELSURFACE MOUNT(SMD-2) RAD-Hard HEXFET TECHNOLOGYProduct SummaryPart Number Radiation Level RDS(on) ID IRHNA7Z60 100K Rads (Si) 0.009 75*A IRHNA3Z60 300K Rads (Si) 0.009 75*A IRHNA4Z60 600K Rads (Si) 0.009 75*A IRHNA8Z60 1000K Rads (Si) 0.009 75*ASMD-2International Rectifiers RADHard HE

PD-91398BRADIATION HARDENED IRHNA7360SEPOWER MOSFET 400V, N-CHANNELSURFACE MOUNT (SMD-2) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) I D IRHNA7360SE 100K Rads (Si) 0.20 24ASMD-2International Rectifiers RADHardTM HEXFET MOSFETtechnology provides high performance power MOSFETsFeatures:for space applications. This technology ha

PD - 91432CRADIATION HARDENED IRHNA7264SEPOWER MOSFET 250V, N-CHANNELSURFACE MOUNT (SMD-2) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) I D IRHNA7264SE 100K Rads (Si) 0.11 34ASMD-2International Rectifiers RADHardTM HEXFET MOSFETtechnology provides high performance power MOSFETsFeatures:for space applications. This technology

PD - 91416BIRHNA7064JANSR2N7431URADIATION HARDENED60V, N-CHANNELPOWER MOSFETREF: MIL-PRF-19500/664SURFACE MOUNT(SMD-2) RAD Hard HEXFET TECHNOLOGYProduct SummaryPart Number Radiation Level RDS(on) ID QPL Part Number IRHNA7064 100K Rads (Si) 0.015 75*A JANSR2N7431U IRHNA3064 300K Rads (Si) 0.015 75*A JANSF2N7431U IRHNA4064 600K Rads (Si) 0.015 75*A JANSG2N7

PD - 91396CIRHNA7160 100V, N-CHANNELRADIATION HARDENEDREF: MIL-PRF-19500/664POWER MOSFETRAD-Hard HEXFETSURFACE MOUNT (SMD-2) MOSFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNA7160 100K Rads (Si) 0.04 51A JANSR2N7432U IRHNA3160 300K Rads (Si) 0.04 51A JANSF2N7432U IRHNA4160 600K Rads (Si) 0.04 51A JANSG2N7432U I

PD - 91399BRADIATION HARDENED IRHNA7460SEPOWER MOSFET 500V, N-CHANNELSURFACE MOUNT (SMD-2) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) I D IRHNA7460SE 100K Rads (Si) 0.32 20ASMD-2International Rectifiers RADHardTM HEXFET MOSFETtechnology provides high performance power MOSFETsfor space applications. This technology has over a

PD - 91397BIRHNA7260 200V, N-CHANNELRADIATION HARDENEDREF: MIL-PRF-19500/664POWER MOSFETRAD-Hard HEXFETSURFACE MOUNT (SMD-2) MOSFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNA7260 100K Rads (Si) 0.07 43A JANSR2N7433U IRHNA3260 300K Rads (Si) 0.07 43A JANSF2N7433U IRHNA4260 600K Rads (Si) 0.07 43A JANSG2N7433U I