All MOSFET. IRHNA7Z60 Datasheet

 

IRHNA7Z60 Datasheet and Replacement


   Type Designator: IRHNA7Z60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 370 nS
   Cossⓘ - Output Capacitance: 4800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SMD-2
 

 IRHNA7Z60 substitution

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IRHNA7Z60 Datasheet (PDF)

 ..1. Size:121K  international rectifier
irhna7z60.pdf pdf_icon

IRHNA7Z60

PD - 91708BRADIATION HARDENEDIRHNA7Z60POWER MOSFET30V, N-CHANNELSURFACE MOUNT(SMD-2) RAD-Hard HEXFET TECHNOLOGYProduct SummaryPart Number Radiation Level RDS(on) ID IRHNA7Z60 100K Rads (Si) 0.009 75*A IRHNA3Z60 300K Rads (Si) 0.009 75*A IRHNA4Z60 600K Rads (Si) 0.009 75*A IRHNA8Z60 1000K Rads (Si) 0.009 75*ASMD-2International Rectifiers RADHard HE

 8.1. Size:178K  international rectifier
irhna7360se.pdf pdf_icon

IRHNA7Z60

PD-91398BRADIATION HARDENED IRHNA7360SEPOWER MOSFET 400V, N-CHANNELSURFACE MOUNT (SMD-2) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) I D IRHNA7360SE 100K Rads (Si) 0.20 24ASMD-2International Rectifiers RADHardTM HEXFET MOSFETtechnology provides high performance power MOSFETsFeatures:for space applications. This technology ha

 8.2. Size:119K  international rectifier
irhna7264se.pdf pdf_icon

IRHNA7Z60

PD - 91432CRADIATION HARDENED IRHNA7264SEPOWER MOSFET 250V, N-CHANNELSURFACE MOUNT (SMD-2) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) I D IRHNA7264SE 100K Rads (Si) 0.11 34ASMD-2International Rectifiers RADHardTM HEXFET MOSFETtechnology provides high performance power MOSFETsFeatures:for space applications. This technology

 8.3. Size:124K  international rectifier
irhna7064.pdf pdf_icon

IRHNA7Z60

PD - 91416BIRHNA7064JANSR2N7431URADIATION HARDENED60V, N-CHANNELPOWER MOSFETREF: MIL-PRF-19500/664SURFACE MOUNT(SMD-2) RAD Hard HEXFET TECHNOLOGYProduct SummaryPart Number Radiation Level RDS(on) ID QPL Part Number IRHNA7064 100K Rads (Si) 0.015 75*A JANSR2N7431U IRHNA3064 300K Rads (Si) 0.015 75*A JANSF2N7431U IRHNA4064 600K Rads (Si) 0.015 75*A JANSG2N7

Datasheet: IRHNA597160 , IRHNA67160 , IRHNA67164 , IRHNA67260 , IRHNA67264 , IRHNA7264SE , IRHNA7360SE , IRHNA7460SE , IRF9540N , IRHNB7264SE , IRHNJ57234SE , IRHNJ67434 , IRHNJ67C30 , IRHNJ9230 , IRHNM57214SE , IRHSLNA57064 , IRHSLNA57Z60 .

History: IXTH10P60 | HUF75545S3ST

Keywords - IRHNA7Z60 MOSFET datasheet

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