IRHNB7264SE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRHNB7264SE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 34 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 VQgⓘ - Carga de la puerta: 220 nC
trⓘ - Tiempo de subida: 180 nS
Cossⓘ - Capacitancia de salida: 1300 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
Paquete / Cubierta: SMD-3
Búsqueda de reemplazo de MOSFET IRHNB7264SE
IRHNB7264SE Datasheet (PDF)
irhnb7264se.pdf
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irhnb7260.pdf
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irhnb7160.pdf
PD - 91795ARADIATION HARDENEDIRHNB7160POWER MOSFET 100V, N-CHANNELSURFACE MOUNT (SMD-3) RAD Hard HEXFET TECHNOLOGYProduct SummaryPart Number Radiation Level RDS(on) IDIRHNB7160 100K Rads (Si) 0.040 51AIRHNB3160 300K Rads (Si) 0.040 51AIRHNB4160 600K Rads (Si) 0.040 51AIRHNB8160 1000K Rads (Si) 0.040 51ASMD-3International Rectifiers RADHard HEXFET
irhnb7z60.pdf
PD - 91754ARADIATION HARDENEDIRHNB7Z60POWER MOSFET30V, N-CHANNELSURFACE MOUNT(SMD-3) RAD-Hard HEXFET TECHNOLOGYProduct SummaryPart Number Radiation Level RDS(on) ID IRHNB7Z60 100K Rads (Si) 0.009 75*A IRHNB3Z60 300K Rads (Si) 0.009 75*A IRHNB4Z60 600K Rads (Si) 0.009 75*A IRHNB8Z60 1000K Rads (Si) 0.009 75*ASMD-3International Rectifiers RADHard HE
irhnb7460se.pdf
PD - 91741ARADIATION HARDENED IRHNB7460SERADIATION HARDENED IRHNB7460SERADIATION HARDENED IRHNB7460SERADIATION HARDENED IRHNB7460SERADIATION HARDENED IRHNB7460SEPOWER MOSFET 500V, N-CHANNELPOWER MOSFET 500V, N-CHANNELPOWER MOSFET 500V, N-CHANNELPOWER MOSFET 500V, N-CHANNELPOWER MOSFET 500V, N-CHANNELSURFACE MOUNT (SMD-3) RAD Hard HEXFET TECHNOLOGYSURFACE MOUNT (SMD-3
irhnb7360se.pdf
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irhnb7064.pdf
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Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918