IRHNB7264SE MOSFET. Datasheet pdf. Equivalent
Type Designator: IRHNB7264SE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 34 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 220 nC
trⓘ - Rise Time: 180 nS
Cossⓘ - Output Capacitance: 1300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: SMD-3
IRHNB7264SE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRHNB7264SE Datasheet (PDF)
irhnb7264se.pdf
PD - 91738ARADIATION HARDENED IRHNB7264SERADIATION HARDENED IRHNB7264SERADIATION HARDENED IRHNB7264SERADIATION HARDENED IRHNB7264SERADIATION HARDENED IRHNB7264SEPOWER MOSFET 250V, N-CHANNELPOWER MOSFET 250V, N-CHANNELPOWER MOSFET 250V, N-CHANNELPOWER MOSFET 250V, N-CHANNELPOWER MOSFET 250V, N-CHANNELSURFACE MOUNT (SMD-3) RAD Hard HEXFET TECHNOLOGYSURFACE MOUNT (SMD-3
irhnb7260.pdf
PD - 91798ARADIATION HARDENED IRHNB7260POWER MOSFET 200V, N-CHANNELRAD Hard HEXFET TECHNOLOGYSURFACE MOUNT(SMD-3)Product SummaryPart Number Radiation Level RDS(on) I D IRHNB7260 100K Rads (Si) 0.070 43A IRHNB3260 300K Rads (Si) 0.070 43A IRHNB4260 600K Rads (Si) 0.070 43A IRHNB8260 1000K Rads (Si) 0.070 43ASMD-3International Rectifiers RADHard HEXFE
irhnb7160.pdf
PD - 91795ARADIATION HARDENEDIRHNB7160POWER MOSFET 100V, N-CHANNELSURFACE MOUNT (SMD-3) RAD Hard HEXFET TECHNOLOGYProduct SummaryPart Number Radiation Level RDS(on) IDIRHNB7160 100K Rads (Si) 0.040 51AIRHNB3160 300K Rads (Si) 0.040 51AIRHNB4160 600K Rads (Si) 0.040 51AIRHNB8160 1000K Rads (Si) 0.040 51ASMD-3International Rectifiers RADHard HEXFET
irhnb7z60.pdf
PD - 91754ARADIATION HARDENEDIRHNB7Z60POWER MOSFET30V, N-CHANNELSURFACE MOUNT(SMD-3) RAD-Hard HEXFET TECHNOLOGYProduct SummaryPart Number Radiation Level RDS(on) ID IRHNB7Z60 100K Rads (Si) 0.009 75*A IRHNB3Z60 300K Rads (Si) 0.009 75*A IRHNB4Z60 600K Rads (Si) 0.009 75*A IRHNB8Z60 1000K Rads (Si) 0.009 75*ASMD-3International Rectifiers RADHard HE
irhnb7460se.pdf
PD - 91741ARADIATION HARDENED IRHNB7460SERADIATION HARDENED IRHNB7460SERADIATION HARDENED IRHNB7460SERADIATION HARDENED IRHNB7460SERADIATION HARDENED IRHNB7460SEPOWER MOSFET 500V, N-CHANNELPOWER MOSFET 500V, N-CHANNELPOWER MOSFET 500V, N-CHANNELPOWER MOSFET 500V, N-CHANNELPOWER MOSFET 500V, N-CHANNELSURFACE MOUNT (SMD-3) RAD Hard HEXFET TECHNOLOGYSURFACE MOUNT (SMD-3
irhnb7360se.pdf
PD - 91740BRADIATION HARDENED IRHNB7360SERADIATION HARDENED IRHNB7360SERADIATION HARDENED IRHNB7360SERADIATION HARDENED IRHNB7360SERADIATION HARDENED IRHNB7360SEPOWER MOSFET 400V, N-CHANNELPOWER MOSFET 400V, N-CHANNELPOWER MOSFET 400V, N-CHANNELPOWER MOSFET 400V, N-CHANNELPOWER MOSFET 400V, N-CHANNELSURFACE MOUNT (SMD-3) RAD Hard HEXFET TECHNOLOGYSURFACE MOUNT (SMD-3
irhnb7064.pdf
PD - 91737ARADIATION HARDENEDIRHNB7064POWER MOSFET60V, N-CHANNELSURFACE MOUNT(SMD-3)RAD Hard HEXFET TECHNOLOGYProduct SummaryPart Number Radiation Level RDS(on) ID IRHNA7064 100K Rads (Si) 0.015 75*A IRHNA3064 300K Rads (Si) 0.015 75*A IRHNA4064 600K Rads (Si) 0.015 75*A IRHNA8064 1000K Rads (Si) 0.015 75*ASMD-3International Rectifiers RADHard H
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
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MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F