IRHNJ57234SE Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRHNJ57234SE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

Cossⓘ - Capacitancia de salida: 157 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm

Encapsulados: SMD-0.5

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IRHNJ57234SE datasheet

 ..1. Size:190K  international rectifier
irhnj57234se.pdf pdf_icon

IRHNJ57234SE

PD-93837D IRHNJ57234SE RADIATION HARDENED JANSR2N7555U3 POWER MOSFET 250V, N-CHANNEL SURFACE MOUNT (SMD-0.5) REF MIL-PRF-19500/704 TECHNOLOGY 5 5 Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ57234SE 100K Rads (Si) 0.4 10A JANSR2N7555U3 SMD-0.5 Features International Rectifier s R5TM technology provides n Single Event Effect (SEE) H

 5.1. Size:119K  international rectifier
irhnj57230.pdf pdf_icon

IRHNJ57234SE

PD - 93753 RADIATION HARDENED IRHNJ57230 POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (SMD-0.5) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHNJ57230 100K Rads (Si) 0.20 13A IRHNJ53230 300K Rads (Si) 0.20 13A IRHNJ54230 600K Rads (Si) 0.20 13A IRHNJ58230 1000K Rads (Si) 0.25 13A SMD-0.5 International Rectifier s R5TM technology provi

 5.2. Size:123K  international rectifier
irhnj57230se.pdf pdf_icon

IRHNJ57234SE

PD - 93836A RADIATION HARDENED IRHNJ57230SE POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (SMD-0.5) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHNJ57230SE 100K Rads (Si) 0.22 12A SMD-0.5 International Rectifier s R5TM technology provides high performance power MOSFETs for space appli- Features cations. These devices have been characterized f

 7.1. Size:125K  international rectifier
irhnj57133se.pdf pdf_icon

IRHNJ57234SE

PD - 94294B RADIATION HARDENED IRHNJ57133SE POWER MOSFET 130V, N-CHANNEL SURFACE MOUNT (SMD-0.5) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHNJ57133SE 100K Rads (Si) 0.08 20A SMD-0.5 International Rectifier s R5TM technology provides high performance power MOSFETs for space appli- Features cations. These devices have been characterized f

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