IRHNJ57234SE Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRHNJ57234SE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 75 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 100 nS
Cossⓘ - Capacitancia de salida: 157 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
Encapsulados: SMD-0.5
Búsqueda de reemplazo de IRHNJ57234SE MOSFET
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IRHNJ57234SE datasheet
irhnj57234se.pdf
PD-93837D IRHNJ57234SE RADIATION HARDENED JANSR2N7555U3 POWER MOSFET 250V, N-CHANNEL SURFACE MOUNT (SMD-0.5) REF MIL-PRF-19500/704 TECHNOLOGY 5 5 Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ57234SE 100K Rads (Si) 0.4 10A JANSR2N7555U3 SMD-0.5 Features International Rectifier s R5TM technology provides n Single Event Effect (SEE) H
irhnj57230.pdf
PD - 93753 RADIATION HARDENED IRHNJ57230 POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (SMD-0.5) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHNJ57230 100K Rads (Si) 0.20 13A IRHNJ53230 300K Rads (Si) 0.20 13A IRHNJ54230 600K Rads (Si) 0.20 13A IRHNJ58230 1000K Rads (Si) 0.25 13A SMD-0.5 International Rectifier s R5TM technology provi
irhnj57230se.pdf
PD - 93836A RADIATION HARDENED IRHNJ57230SE POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (SMD-0.5) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHNJ57230SE 100K Rads (Si) 0.22 12A SMD-0.5 International Rectifier s R5TM technology provides high performance power MOSFETs for space appli- Features cations. These devices have been characterized f
irhnj57133se.pdf
PD - 94294B RADIATION HARDENED IRHNJ57133SE POWER MOSFET 130V, N-CHANNEL SURFACE MOUNT (SMD-0.5) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHNJ57133SE 100K Rads (Si) 0.08 20A SMD-0.5 International Rectifier s R5TM technology provides high performance power MOSFETs for space appli- Features cations. These devices have been characterized f
Otros transistores... IRHNA67164, IRHNA67260, IRHNA67264, IRHNA7264SE, IRHNA7360SE, IRHNA7460SE, IRHNA7Z60, IRHNB7264SE, 13N50, IRHNJ67434, IRHNJ67C30, IRHNJ9230, IRHNM57214SE, IRHSLNA57064, IRHSLNA57Z60, IRHSNA57064, IRHSNA57Z60
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