IRHNJ57234SE
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRHNJ57234SE
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 75
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 32
nC
trⓘ - Rise Time: 100
nS
Cossⓘ -
Output Capacitance: 157
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4
Ohm
Package: SMD-0.5
IRHNJ57234SE
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRHNJ57234SE
Datasheet (PDF)
..1. Size:190K international rectifier
irhnj57234se.pdf 
PD-93837DIRHNJ57234SERADIATION HARDENED JANSR2N7555U3POWER MOSFET 250V, N-CHANNELSURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/704TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ57234SE 100K Rads (Si) 0.4 10A JANSR2N7555U3SMD-0.5Features:International Rectifiers R5TM technology providesn Single Event Effect (SEE) H
5.1. Size:119K international rectifier
irhnj57230.pdf
PD - 93753RADIATION HARDENED IRHNJ57230POWER MOSFET200V, N-CHANNELSURFACE MOUNT (SMD-0.5) TECHNOLOGY44#cProduct Summary Part Number Radiation Level RDS(on) ID IRHNJ57230 100K Rads (Si) 0.20 13A IRHNJ53230 300K Rads (Si) 0.20 13A IRHNJ54230 600K Rads (Si) 0.20 13A IRHNJ58230 1000K Rads (Si) 0.25 13ASMD-0.5International Rectifiers R5TM technology provi
5.2. Size:123K international rectifier
irhnj57230se.pdf
PD - 93836ARADIATION HARDENED IRHNJ57230SEPOWER MOSFET200V, N-CHANNELSURFACE MOUNT (SMD-0.5) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) IDIRHNJ57230SE 100K Rads (Si) 0.22 12ASMD-0.5International Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-Features:cations. These devices have been characterized f
7.1. Size:125K international rectifier
irhnj57133se.pdf
PD - 94294BRADIATION HARDENED IRHNJ57133SEPOWER MOSFET130V, N-CHANNELSURFACE MOUNT (SMD-0.5) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) IDIRHNJ57133SE 100K Rads (Si) 0.08 20ASMD-0.5International Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-Features:cations. These devices have been characterized f
7.2. Size:113K international rectifier
irhnj57034.pdf
PD - 93752ARADIATION HARDENED IRHNJ57034POWER MOSFET60V, N-CHANNELSURFACE MOUNT (SMD-0.5) TECHNOLOGY44#cProduct Summary Part Number Radiation Level RDS(on) ID IRHNJ57034 100K Rads (Si) 0.030 22A* IRHNJ53034 300K Rads (Si) 0.030 22A* IRHNJ54034 600K Rads (Si) 0.030 22A* IRHNJ58034 1000K Rads (Si) 0.038 22A*SMD-0.5International Rectifiers R5TM technolo
7.3. Size:121K international rectifier
irhnj57130.pdf
PD - 93754CRADIATION HARDENED IRHNJ57130POWER MOSFET100V, N-CHANNELSURFACE MOUNT (SMD-0.5) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHNJ57130 100K Rads (Si) 0.060 22A* IRHNJ53130 300K Rads (Si) 0.060 22A* IRHNJ54130 600K Rads (Si) 0.060 22A* IRHNJ58130 1000K Rads (Si) 0.075 22A*SMD-0.5International Rectifiers R5TM tec
7.4. Size:109K international rectifier
irhnj57z30.pdf
PD - 93751ARADIATION HARDENED IRHNJ57Z30POWER MOSFET30V, N-CHANNELSURFACE MOUNT (SMD-0.5) TECHNOLOGY44#cProduct Summary Part Number Radiation Level RDS(on) ID IRHNJ57Z30 100K Rads (Si) 0.020 22A* IRHNJ53Z30 300K Rads (Si) 0.020 22A* IRHNJ54Z30 600K Rads (Si) 0.020 22A* IRHNJ58Z30 1000K Rads (Si) 0.025 22A*SMD-0.5International Rectifiers R5TM technolo
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