IRHNJ57234SE Datasheet. Specs and Replacement

Type Designator: IRHNJ57234SE  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 157 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: SMD-0.5

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IRHNJ57234SE substitution

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IRHNJ57234SE datasheet

 ..1. Size:190K  international rectifier
 irhnj57234se.pdf pdf_icon

IRHNJ57234SE

PD-93837D IRHNJ57234SE RADIATION HARDENED JANSR2N7555U3 POWER MOSFET 250V, N-CHANNEL SURFACE MOUNT (SMD-0.5) REF MIL-PRF-19500/704 TECHNOLOGY 5 5 Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ57234SE 100K Rads (Si) 0.4 10A JANSR2N7555U3 SMD-0.5 Features International Rectifier s R5TM technology provides n Single Event Effect (SEE) H... See More ⇒

 5.1. Size:119K  international rectifier
 irhnj57230.pdf pdf_icon

IRHNJ57234SE

PD - 93753 RADIATION HARDENED IRHNJ57230 POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (SMD-0.5) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHNJ57230 100K Rads (Si) 0.20 13A IRHNJ53230 300K Rads (Si) 0.20 13A IRHNJ54230 600K Rads (Si) 0.20 13A IRHNJ58230 1000K Rads (Si) 0.25 13A SMD-0.5 International Rectifier s R5TM technology provi... See More ⇒

 5.2. Size:123K  international rectifier
 irhnj57230se.pdf pdf_icon

IRHNJ57234SE

PD - 93836A RADIATION HARDENED IRHNJ57230SE POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (SMD-0.5) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHNJ57230SE 100K Rads (Si) 0.22 12A SMD-0.5 International Rectifier s R5TM technology provides high performance power MOSFETs for space appli- Features cations. These devices have been characterized f... See More ⇒

 7.1. Size:125K  international rectifier
 irhnj57133se.pdf pdf_icon

IRHNJ57234SE

PD - 94294B RADIATION HARDENED IRHNJ57133SE POWER MOSFET 130V, N-CHANNEL SURFACE MOUNT (SMD-0.5) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHNJ57133SE 100K Rads (Si) 0.08 20A SMD-0.5 International Rectifier s R5TM technology provides high performance power MOSFETs for space appli- Features cations. These devices have been characterized f... See More ⇒

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Detailed specifications: IRHNA67164, IRHNA67260, IRHNA67264, IRHNA7264SE, IRHNA7360SE, IRHNA7460SE, IRHNA7Z60, IRHNB7264SE, 13N50, IRHNJ67434, IRHNJ67C30, IRHNJ9230, IRHNM57214SE, IRHSLNA57064, IRHSLNA57Z60, IRHSNA57064, IRHSNA57Z60

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