All MOSFET. IRHNJ57234SE Datasheet

 

IRHNJ57234SE Datasheet and Replacement


   Type Designator: IRHNJ57234SE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 32 nC
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 157 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: SMD-0.5
 

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IRHNJ57234SE Datasheet (PDF)

 ..1. Size:190K  international rectifier
 irhnj57234se.pdf pdf_icon

IRHNJ57234SE

PD-93837DIRHNJ57234SERADIATION HARDENED JANSR2N7555U3POWER MOSFET 250V, N-CHANNELSURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/704TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ57234SE 100K Rads (Si) 0.4 10A JANSR2N7555U3SMD-0.5Features:International Rectifiers R5TM technology providesn Single Event Effect (SEE) H

 5.1. Size:119K  international rectifier
 irhnj57230.pdf pdf_icon

IRHNJ57234SE

PD - 93753RADIATION HARDENED IRHNJ57230POWER MOSFET200V, N-CHANNELSURFACE MOUNT (SMD-0.5) TECHNOLOGY44#cProduct Summary Part Number Radiation Level RDS(on) ID IRHNJ57230 100K Rads (Si) 0.20 13A IRHNJ53230 300K Rads (Si) 0.20 13A IRHNJ54230 600K Rads (Si) 0.20 13A IRHNJ58230 1000K Rads (Si) 0.25 13ASMD-0.5International Rectifiers R5TM technology provi

 5.2. Size:123K  international rectifier
 irhnj57230se.pdf pdf_icon

IRHNJ57234SE

PD - 93836ARADIATION HARDENED IRHNJ57230SEPOWER MOSFET200V, N-CHANNELSURFACE MOUNT (SMD-0.5) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) IDIRHNJ57230SE 100K Rads (Si) 0.22 12ASMD-0.5International Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-Features:cations. These devices have been characterized f

 7.1. Size:125K  international rectifier
 irhnj57133se.pdf pdf_icon

IRHNJ57234SE

PD - 94294BRADIATION HARDENED IRHNJ57133SEPOWER MOSFET130V, N-CHANNELSURFACE MOUNT (SMD-0.5) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) IDIRHNJ57133SE 100K Rads (Si) 0.08 20ASMD-0.5International Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-Features:cations. These devices have been characterized f

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: MSK7N80T

Keywords - IRHNJ57234SE MOSFET datasheet

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