IRF100B202 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF100B202
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 221 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 97 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 56 nS
Cossⓘ - Capacitancia de salida: 319 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0086 Ohm
Paquete / Cubierta: TO-220AB
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IRF100B202 Datasheet (PDF)
irf100b202.pdf
StrongIRFET IRF100B202 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 100V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 7.2m Synchronous rectifier applications G max 8.6m Resonant mode power supplies S OR-ing and redundan
irf100b202.pdf
StrongIRFET IRF100B202 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 100V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 7.2m Synchronous rectifier applications G max 8.6m Resonant mode power supplies S OR-ing and redundan
irf100b202.pdf
isc N-Channel MOSFET Transistor IRF100B202IIRF100B202FEATURESStatic drain-source on-resistance:RDS(on) 8.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)
irf100b201 irf100s201.pdf
StrongIRFET IRF100B201 IRF100S201 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 100V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 3.5m Synchronous rectifier applications G max 4.2m Resonant mode power supplies S OR-ing
irf100b201 irf100s201.pdf
StrongIRFET IRF100B201 IRF100S201 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 100V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 3.5m Synchronous rectifier applications G max 4.2m Resonant mode power supplies S OR-ing
irf100b201.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF100B201 IIRF100B201FEATURESStatic drain-source on-resistance:RDS(on) 4.2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MA
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918