All MOSFET. IRF100B202 Datasheet

 

IRF100B202 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF100B202
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 221 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 97 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 77 nC
   trⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 319 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0086 Ohm
   Package: TO-220AB

 IRF100B202 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF100B202 Datasheet (PDF)

 ..1. Size:529K  international rectifier
 irf100b202.pdf

IRF100B202 IRF100B202

StrongIRFET IRF100B202 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 100V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 7.2m Synchronous rectifier applications G max 8.6m Resonant mode power supplies S OR-ing and redundan

 ..2. Size:529K  infineon
 irf100b202.pdf

IRF100B202 IRF100B202

StrongIRFET IRF100B202 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 100V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 7.2m Synchronous rectifier applications G max 8.6m Resonant mode power supplies S OR-ing and redundan

 ..3. Size:245K  inchange semiconductor
 irf100b202.pdf

IRF100B202 IRF100B202

isc N-Channel MOSFET Transistor IRF100B202IIRF100B202FEATURESStatic drain-source on-resistance:RDS(on) 8.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 5.1. Size:614K  international rectifier
 irf100b201 irf100s201.pdf

IRF100B202 IRF100B202

StrongIRFET IRF100B201 IRF100S201 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 100V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 3.5m Synchronous rectifier applications G max 4.2m Resonant mode power supplies S OR-ing

 5.2. Size:617K  infineon
 irf100b201 irf100s201.pdf

IRF100B202 IRF100B202

StrongIRFET IRF100B201 IRF100S201 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 100V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 3.5m Synchronous rectifier applications G max 4.2m Resonant mode power supplies S OR-ing

 5.3. Size:245K  inchange semiconductor
 irf100b201.pdf

IRF100B202 IRF100B202

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF100B201 IIRF100B201FEATURESStatic drain-source on-resistance:RDS(on) 4.2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MA

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRFR4105ZTR

 

 
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