Справочник MOSFET. IRF100B202

 

IRF100B202 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF100B202
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 221 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 97 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 56 ns
   Cossⓘ - Выходная емкость: 319 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0086 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для IRF100B202

 

 

IRF100B202 Datasheet (PDF)

 ..1. Size:529K  international rectifier
 irf100b202.pdf

IRF100B202 IRF100B202

StrongIRFET IRF100B202 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 100V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 7.2m Synchronous rectifier applications G max 8.6m Resonant mode power supplies S OR-ing and redundan

 ..2. Size:529K  infineon
 irf100b202.pdf

IRF100B202 IRF100B202

StrongIRFET IRF100B202 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 100V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 7.2m Synchronous rectifier applications G max 8.6m Resonant mode power supplies S OR-ing and redundan

 ..3. Size:245K  inchange semiconductor
 irf100b202.pdf

IRF100B202 IRF100B202

isc N-Channel MOSFET Transistor IRF100B202IIRF100B202FEATURESStatic drain-source on-resistance:RDS(on) 8.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 5.1. Size:614K  international rectifier
 irf100b201 irf100s201.pdf

IRF100B202 IRF100B202

StrongIRFET IRF100B201 IRF100S201 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 100V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 3.5m Synchronous rectifier applications G max 4.2m Resonant mode power supplies S OR-ing

 5.2. Size:617K  infineon
 irf100b201 irf100s201.pdf

IRF100B202 IRF100B202

StrongIRFET IRF100B201 IRF100S201 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 100V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 3.5m Synchronous rectifier applications G max 4.2m Resonant mode power supplies S OR-ing

 5.3. Size:245K  inchange semiconductor
 irf100b201.pdf

IRF100B202 IRF100B202

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF100B201 IIRF100B201FEATURESStatic drain-source on-resistance:RDS(on) 4.2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MA

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