IRF1404SPBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF1404SPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 162 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 140 nS

Cossⓘ - Capacitancia de salida: 1680 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO-263

 Búsqueda de reemplazo de IRF1404SPBF MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRF1404SPBF datasheet

 ..1. Size:274K  international rectifier
 irf1404spbf.pdf pdf_icon

IRF1404SPBF

PD -95104 IRF1404SPbF IRF1404LPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 40V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.004 G l Lead-Free ID = 162A Description S Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing tec

 ..2. Size:274K  international rectifier
 irf1404lpbf irf1404spbf.pdf pdf_icon

IRF1404SPBF

PD -95104 IRF1404SPbF IRF1404LPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 40V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.004 G l Lead-Free ID = 162A Description S Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing tec

 6.1. Size:139K  international rectifier
 irf1404s.pdf pdf_icon

IRF1404SPBF

PD -93853B IRF1404S IRF1404L HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.004 Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

 6.2. Size:303K  infineon
 auirf1404s auirf1404l.pdf pdf_icon

IRF1404SPBF

AUIRF1404S AUTOMOTIVE GRADE AUIRF1404L HEXFET Power MOSFET Features Advanced Planar Technology VDSS 40V Dynamic dv/dt Rating RDS(on) typ. 3.5m 175 C Operating Temperature max. 4.0m Fast Switching ID (Silicon Limited) 162A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-F

MOSTRAR MÁS

Otros transistores... IRF1324LPBF, IRF1324PBF, IRF1324S-7PPBF, IRF1324SPBF, IRF133, IRF13N50, IRF1404LPBF, IRF1404PBF, IRFP064N, IRF1404ZGPBF, IRF1404ZLPBF, IRF1404ZPBF, IRF1404ZSPBF, IRF1405LPBF, IRF1405PBF, IRF1405SPBF, STH9NA60FI