PD -95104IRF1404SPbFIRF1404LPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDl 175C Operating Temperature VDSS = 40Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.004Gl Lead-FreeID = 162ADescriptionSSeventh Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtec

PD -95104IRF1404SPbFIRF1404LPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDl 175C Operating Temperature VDSS = 40Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.004Gl Lead-FreeID = 162ADescriptionSSeventh Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtec

PD -93853BIRF1404SIRF1404LHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.004 Fast SwitchingG Fully Avalanche RatedID = 162A DescriptionSSeventh Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve ex

AUIRF1404S AUTOMOTIVE GRADE AUIRF1404L HEXFET Power MOSFET Features Advanced Planar Technology VDSS 40V Dynamic dv/dt Rating RDS(on) typ. 3.5m 175C Operating Temperature max. 4.0m Fast Switching ID (Silicon Limited) 162A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-F

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1404SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM