All MOSFET. IRF1404SPBF Datasheet

 

 

IRF1404SPBF Datasheet and Replacement


   Type Designator: IRF1404SPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 162 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 1680 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO-263
 

 IRF1404SPBF substitution

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IRF1404SPBF Datasheet (PDF)

 ..1. Size:274K  international rectifier
 irf1404spbf.pdf pdf_icon

IRF1404SPBF

PD -95104IRF1404SPbFIRF1404LPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDl 175C Operating Temperature VDSS = 40Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.004Gl Lead-FreeID = 162ADescriptionSSeventh Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtec

 ..2. Size:274K  international rectifier
 irf1404lpbf irf1404spbf.pdf pdf_icon

IRF1404SPBF

PD -95104IRF1404SPbFIRF1404LPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDl 175C Operating Temperature VDSS = 40Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.004Gl Lead-FreeID = 162ADescriptionSSeventh Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtec

 6.1. Size:139K  international rectifier
 irf1404s.pdf pdf_icon

IRF1404SPBF

PD -93853BIRF1404SIRF1404LHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.004 Fast SwitchingG Fully Avalanche RatedID = 162A DescriptionSSeventh Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve ex

 6.2. Size:303K  infineon
 auirf1404s auirf1404l.pdf pdf_icon

IRF1404SPBF

AUIRF1404S AUTOMOTIVE GRADE AUIRF1404L HEXFET Power MOSFET Features Advanced Planar Technology VDSS 40V Dynamic dv/dt Rating RDS(on) typ. 3.5m 175C Operating Temperature max. 4.0m Fast Switching ID (Silicon Limited) 162A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-F

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Keywords - IRF1404SPBF MOSFET datasheet

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