STL15N65M5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STL15N65M5N-channel 650 V, 0.335 typ., 10 A MDmesh V Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDSS RDS(on) max IDSTL15N65M5 710 V

STL15N3LLH5N-channel 30 V, 0.0045 , 15 A, PowerFLAT (3.3 x 3.3)STripFET V Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTL15N3LLH5 30 V

STL15DN4F5Dual N-channel 40 V, 8 m, 15 APowerFLAT(5x6) double island, STripFET V Power MOSFETFeaturesRDS(on) Type VDSS IDmax.STL15DN4F5 40 V 9 m 15 A (1)1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate chargePowerFLAT (5x6) Low gate drive power lossesDouble

STL150N3LLH5N-channel 30 V, 0.0014 , 35 A, PowerFLAT (6x5)STripFET V Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTL150N3LLH5 30 V

2STL1525Low voltage high performance NPN power transistorFeatures Very low collector-emitter saturation voltage High current gain characteristic Fast switching speedApplications Emergency lighting LED driveTO-92MODTO-92MOD-AP Motherboard and hard disk drive Mobile equipment DC-DC converter, voltage regulationFigure 1. Internal schematic diagra

STL150N3LLH6N-channel 30 V, 0.0016 , 33 A PowerFLAT (6x5)STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTL150N3LLH6 30 V 0.0024 33 A (1)1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmarkPowerFLAT ( 6x5 ) Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses V

STL150N3LLH6N-channel 30 V, 0.0016 , 33 A PowerFLAT (6x5)STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTL150N3LLH6 30 V 0.0024 33 A (1)1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmarkPowerFLAT ( 6x5 ) Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses V