STL15N65M5
MOSFET. Datasheet pdf. Equivalent
Type Designator: STL15N65M5
Marking Code: 15N65M5
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 52
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 22
nC
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 23
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.375
Ohm
Package: POWERFLAT-HV
STL15N65M5
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STL15N65M5
Datasheet (PDF)
..1. Size:1411K st
stl15n65m5.pdf 
STL15N65M5N-channel 650 V, 0.335 typ., 10 A MDmesh V Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDSS RDS(on) max IDSTL15N65M5 710 V
8.1. Size:849K st
stl15n3llh5.pdf
STL15N3LLH5N-channel 30 V, 0.0045 , 15 A, PowerFLAT (3.3 x 3.3)STripFET V Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTL15N3LLH5 30 V
9.1. Size:775K st
stl15dn4f5.pdf
STL15DN4F5Dual N-channel 40 V, 8 m, 15 APowerFLAT(5x6) double island, STripFET V Power MOSFETFeaturesRDS(on) Type VDSS IDmax.STL15DN4F5 40 V 9 m 15 A (1)1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate chargePowerFLAT (5x6) Low gate drive power lossesDouble
9.2. Size:522K st
stl150n3llh5.pdf
STL150N3LLH5N-channel 30 V, 0.0014 , 35 A, PowerFLAT (6x5)STripFET V Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTL150N3LLH5 30 V
9.3. Size:141K st
2stl1525.pdf
2STL1525Low voltage high performance NPN power transistorFeatures Very low collector-emitter saturation voltage High current gain characteristic Fast switching speedApplications Emergency lighting LED driveTO-92MODTO-92MOD-AP Motherboard and hard disk drive Mobile equipment DC-DC converter, voltage regulationFigure 1. Internal schematic diagra
9.4. Size:829K st
stl150n3llh6.pdf
STL150N3LLH6N-channel 30 V, 0.0016 , 33 A PowerFLAT (6x5)STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTL150N3LLH6 30 V 0.0024 33 A (1)1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmarkPowerFLAT ( 6x5 ) Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses V
9.5. Size:835K onsemi
stl150n3llh6.pdf
STL150N3LLH6N-channel 30 V, 0.0016 , 33 A PowerFLAT (6x5)STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTL150N3LLH6 30 V 0.0024 33 A (1)1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmarkPowerFLAT ( 6x5 ) Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses V
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