STW9NA80 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STW9NA80STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218FAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA80 800 V

STW9NA80STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218FAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA80 800 V

STW9NA60STH9NA60FI N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA60 600 V

STB9NK90Z, STF9NK90ZSTP9NK90Z, STW9NK90ZN-channel 900 V, 1.1 , 8 A, TO-220, TO-220FP, D2PAK, TO-247Zener-protected SuperMESH Power MOSFETFeaturesRDS(on) Type VDSS ID Pwmax.331STB9NK90Z 160 W 21DPAKTO-220STW9NK90Z 160 W900V

STP9NK70Z - STP9NK70ZFPSTB9NK70Z - STB9NK70Z-1 - STW9NK70ZN-CHANNEL 700V - 1 - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247Zener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP9NK70Z 700 V

STW9NB80N-CHANNEL 800V - 0.85 - 9.3A TO-247PowerMESH MOSFETTYPE VDSS RDS(on) IDSTW9NB80 800V

STW9NK95ZN-channel 950 V - 1.15 - 7 A - TO-247Zener-protected SuperMESHTM Power MOSFETFeaturesRDS(on) Type VDSS ID PwMaxSTW9NK95Z 950 V

STW9NC70ZN-CHANNEL 700V - 0.90 - 7.5A TO-247Zener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTW9NC70Z 700 V

STW9NB90N-CHANNEL 900V - 0.85 - 9.7A - TO-247PowerMESH MOSFETTYPE VDSS RDS(on) IDSTW9NB90 900 V

STW9N150N-channel 1500 V - 1.8 - 8 A - TO-247very high voltage PowerMESH Power MOSFETFeaturesType VDSS RDS(on) ID PwSTW9N150 1500 V

STP9N80K5, STW9N80K5 N-channel 800 V, 0.73 typ., 7 A MDmesh K5 Power MOSFETs in a TO-220 and TO-247 packages Datasheet - production data Features TABOrder code V R max. I DS DS(on) DSTP9N80K5 800 V 0.90 7 A STW9N80K5 33 Industrys lowest R x area DS(on)221 Industrys best FoM (figure of merit) 1 Ultra-low gate charge 100% avala

STW9NC80ZN-CHANNEL 800V - 0.82 - 9.4A TO-247Zener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTW9NC80Z 800 V

iscN-Channel MOSFET Transistor STW9NK90ZFEATURESDrain Current : I =8A@ T =25D CDrain Source Voltage: V =900V(Min)DSSStatic Drain-Source On-Resistance: R =1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSmotor drive, DC-DC converter, power switchand solenoid drive.ABSOL