STW9NA80 MOSFET. Datasheet pdf. Equivalent
Type Designator: STW9NA80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 190 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.75 V
Maximum Drain Current |Id|: 9.1 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 115 nC
Rise Time (tr): 45 nS
Drain-Source Capacitance (Cd): 290 pF
Maximum Drain-Source On-State Resistance (Rds): 1 Ohm
Package: TO-247
STW9NA80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STW9NA80 Datasheet (PDF)
1.1. stw9na80.pdf 
Size:147K _update

1.2. 2sk2078 stw9na80.pdf Size:132K _st
STW9NA80 STH9NA80FI ? N - CHANNEL 800V - 0.85? - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW9NA80 800 V < 1.0 ? 9.1 A STH9NA80FI 800 V < 1.0 5.9 A ? TYPICAL R = 0.85 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES 3 3 GATE CHARGE MINIMIZED 2 2 1 1 REDUCED THR
1.3. stw9na80.pdf Size:132K _st2
STW9NA80 STH9NA80FI ? N - CHANNEL 800V - 0.85? - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW9NA80 800 V < 1.0 ? 9.1 A STH9NA80FI 800 V < 1.0 5.9 A ? TYPICAL R = 0.85 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES 3 3 GATE CHARGE MINIMIZED 2 2 1 1 REDUCED THR
Datasheet: STW7NA90 , STW80NE06-10 , STW80NF06 , STW80NF55-08 , STW88N65M5 , STW8NA60 , STW8NA80 , STW8NB100 , BSS138 , STW9NK95Z , STWA12N120K5 , STWA20N95K5 , STWA45N65M5 , STWA57N65M5 , STWA88N65M5 , STY100NM60N , STY100NS20FD .
