All MOSFET. STW9NA80 Datasheet

 

STW9NA80 MOSFET. Datasheet pdf. Equivalent

Type Designator: STW9NA80

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 190 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.75 V

Maximum Drain Current |Id|: 9.1 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 115 nC

Rise Time (tr): 45 nS

Drain-Source Capacitance (Cd): 290 pF

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO-247

STW9NA80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STW9NA80 Datasheet (PDF)

1.1. stw9na80.pdf Size:147K _update

STW9NA80
STW9NA80



1.2. 2sk2078 stw9na80.pdf Size:132K _st

STW9NA80
STW9NA80

STW9NA80 STH9NA80FI ? N - CHANNEL 800V - 0.85? - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW9NA80 800 V < 1.0 ? 9.1 A STH9NA80FI 800 V < 1.0 5.9 A ? TYPICAL R = 0.85 ? DS(on) 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES 3 3 GATE CHARGE MINIMIZED 2 2 1 1 REDUCED THR

 1.3. stw9na80.pdf Size:132K _st2

STW9NA80
STW9NA80

STW9NA80 STH9NA80FI ? N - CHANNEL 800V - 0.85? - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW9NA80 800 V < 1.0 ? 9.1 A STH9NA80FI 800 V < 1.0 5.9 A ? TYPICAL R = 0.85 ? DS(on) 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES 3 3 GATE CHARGE MINIMIZED 2 2 1 1 REDUCED THR

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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