MCH5837 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MCH5837
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.145 Ohm
   Paquete / Cubierta: SOT-353 MCPH5

Búsqueda de reemplazo de MOSFET MCH5837

MCH5837 Datasheet (PDF)

..1. Size:62K sanyo
mch5837.pdf

Ordering number : ENA0781A MCH5837SANYO SemiconductorsDATA SHEETMOSFET : N-Channel Silicon MOSFETSBD : Schottky Barrier DiodeMCH5837General-Purpose Switching DeviceApplicationsFeatures Composite type with an N-channel silicon MOSFET and a schottky barrier diode (SS10015M)contained in one package facilitating high-density mounting. [MOSFET] Low ON-resistance.

8.1. Size:249K onsemi
mch5839.pdf

Ordering number : ENA2165MCH5839P-Channel Power MOSFEThttp://onsemi.com 20V, 1.5A, 266m , Single MCPH5 with Schottky DiodeFeatures Composite type with an P-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting Halogen free compliance [MOSFET] Low On-resistance RDS(on)1=205m (typ.)

9.1. Size:48K sanyo
mch5802.pdf

Ordering number : ENN6961MCH5802MOSFET : P-Channel Silicon MOSFETSBD : Schottky Barrier DiodeMCH5802DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm(MCH3308) and a Schottky Barrier Diode (SBS006M) 2195contained in one package facilitating high-density[MCH5802]mounting.[MOSFET]0.3 0.15 Low ON-res

9.2. Size:40K sanyo
mch5805.pdf

Ordering number : ENN7125MCH5805MOSFET : P-Channel Silicon MOSFETSBD : Schottky Barrier DiodeMCH5805DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with a P-channel sillicon MOSFET unit : mm(MCH3314) and a Schottky barrier diode (SB01-05) 2195contained in one package facilitating high-density[MCH5805]mounting.0.3 0.15[MOSFET]4 5 Low O

9.3. Size:37K sanyo
mch5804.pdf

Ordering number : ENN6942MCH5804MOSFET : N-Channel Silicon MOSFETSBD : Schottky Barrier DiodeMCH5804DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm(MCH3408) and a Schottky Barrier Diode (SBS007M) 2195contained in one package facilitating high-density[MCH5804]mounting.0.3 0.15[MOSFET]4 5 Low

9.4. Size:48K sanyo
mch5803.pdf

Ordering number : ENN6958MCH5803MOSFET : N-Channel Silicon MOSFETSBD : Schottky Barrier DiodeMCH5803DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm(MCH3408) and a Schottky Barrier Diode (SBS006M) 2195contained in one package facilitating high-density[MCH5803]mounting.[MOSFET]0.3 0.15 Low ON-re

9.5. Size:39K sanyo
mch5801.pdf

Ordering number : ENN6941MCH5801MOSFET : N-Channel Silicon MOSFETSBD : Schottky Barrier DiodeMCH5801DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm(MCH3405) and a Schottky Barrier Diode (SBS007M) 2195contained in one package facilitating high-density[MCH5801]mounting.[MOSFET] 0.3 0.15 Low ON-res

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