All MOSFET. MCH5837 Datasheet

 

MCH5837 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MCH5837
   Marking Code: YB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.8 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm
   Package: SOT-353 MCPH5

 MCH5837 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MCH5837 Datasheet (PDF)

 ..1. Size:62K  sanyo
 mch5837.pdf

MCH5837 MCH5837

Ordering number : ENA0781A MCH5837SANYO SemiconductorsDATA SHEETMOSFET : N-Channel Silicon MOSFETSBD : Schottky Barrier DiodeMCH5837General-Purpose Switching DeviceApplicationsFeatures Composite type with an N-channel silicon MOSFET and a schottky barrier diode (SS10015M)contained in one package facilitating high-density mounting. [MOSFET] Low ON-resistance.

 8.1. Size:249K  onsemi
 mch5839.pdf

MCH5837 MCH5837

Ordering number : ENA2165MCH5839P-Channel Power MOSFEThttp://onsemi.com 20V, 1.5A, 266m , Single MCPH5 with Schottky DiodeFeatures Composite type with an P-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting Halogen free compliance [MOSFET] Low On-resistance RDS(on)1=205m (typ.)

 9.1. Size:48K  sanyo
 mch5802.pdf

MCH5837 MCH5837

Ordering number : ENN6961MCH5802MOSFET : P-Channel Silicon MOSFETSBD : Schottky Barrier DiodeMCH5802DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm(MCH3308) and a Schottky Barrier Diode (SBS006M) 2195contained in one package facilitating high-density[MCH5802]mounting.[MOSFET]0.3 0.15 Low ON-res

 9.2. Size:40K  sanyo
 mch5805.pdf

MCH5837 MCH5837

Ordering number : ENN7125MCH5805MOSFET : P-Channel Silicon MOSFETSBD : Schottky Barrier DiodeMCH5805DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with a P-channel sillicon MOSFET unit : mm(MCH3314) and a Schottky barrier diode (SB01-05) 2195contained in one package facilitating high-density[MCH5805]mounting.0.3 0.15[MOSFET]4 5 Low O

 9.3. Size:37K  sanyo
 mch5804.pdf

MCH5837 MCH5837

Ordering number : ENN6942MCH5804MOSFET : N-Channel Silicon MOSFETSBD : Schottky Barrier DiodeMCH5804DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm(MCH3408) and a Schottky Barrier Diode (SBS007M) 2195contained in one package facilitating high-density[MCH5804]mounting.0.3 0.15[MOSFET]4 5 Low

 9.4. Size:48K  sanyo
 mch5803.pdf

MCH5837 MCH5837

Ordering number : ENN6958MCH5803MOSFET : N-Channel Silicon MOSFETSBD : Schottky Barrier DiodeMCH5803DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm(MCH3408) and a Schottky Barrier Diode (SBS006M) 2195contained in one package facilitating high-density[MCH5803]mounting.[MOSFET]0.3 0.15 Low ON-re

 9.5. Size:39K  sanyo
 mch5801.pdf

MCH5837 MCH5837

Ordering number : ENN6941MCH5801MOSFET : N-Channel Silicon MOSFETSBD : Schottky Barrier DiodeMCH5801DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm(MCH3405) and a Schottky Barrier Diode (SBS007M) 2195contained in one package facilitating high-density[MCH5801]mounting.[MOSFET] 0.3 0.15 Low ON-res

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History: WMJ36N65F2

 

 
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