MCP87018 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MCP87018
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 28.3 nS
Cossⓘ - Capacitancia de salida: 1305 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0019 Ohm
Paquete / Cubierta: PDFN5X6
- Selección de transistores por parámetros
MCP87018 Datasheet (PDF)
mcp87018.pdf

MCP87018High-Speed N-Channel Power MOSFETFeatures: Description: Low Drain-to-Source On Resistance (RDS(ON)) The MCP87018 is an N-Channel power MOSFET in apopular PDFN 5 mm x 6 mm package. Advanced Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD) packaging and silicon processing technologies allowthe MCP87018 to achieve a low QG for a given RDS(on) Low Series Ga
mcp87055.pdf

MCP87055High-Speed N-Channel Power MOSFETFeatures Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87055 device is an N-Channel powerMOSFET in a popular PDFN 3.3 mm x 3.3 mm Low Total Gate Charge (QG) and Gate-to-Drain package. Advanced packaging and silicon processingCharge (QGD)technologies allow the MCP87055 to achieve a low QG Low Series Gate Resista
mcp87090.pdf

MCP87090High-Speed N-Channel Power MOSFETFeatures:Description: Low Drain-to-Source On Resistance (RDS(ON))The MCP87090 is an N-Channel power MOSFET in a Low Total Gate Charge (QG) and Gate-to-Drain popular PDFN 5 mm x 6 mm package, as well as aCharge (QGD)PDFN 3.3 mm x 3.3 mm package. Advanced Low Series Gate Resistance (RG)packaging and silicon processing technol
mcp87050.pdf

MCP87050High-Speed N-Channel Power MOSFETFeatures: Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87050 is an N-Channel power MOSFET in apopular PDFN 5 mm x 6 mm package. Advanced Low Total Gate Charge (QG) and Gate-to-Drain packaging and silicon processing technologies allowCharge (QGD)the MCP87050 to achieve a low QG for a given RDS(ON) Low Series Ga
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: UT4957 | SVG087R0NT | UTT108N03 | HUF75842P3 | CEDM8001 | CEDM7001 | CEB730G
History: UT4957 | SVG087R0NT | UTT108N03 | HUF75842P3 | CEDM8001 | CEDM7001 | CEB730G



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