MCP87018 Datasheet. Specs and Replacement
Type Designator: MCP87018 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28.3 nS
Cossⓘ - Output Capacitance: 1305 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
Package: PDFN5X6
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MCP87018 substitution
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MCP87018 datasheet
mcp87018.pdf
MCP87018 High-Speed N-Channel Power MOSFET Features Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87018 is an N-Channel power MOSFET in a popular PDFN 5 mm x 6 mm package. Advanced Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD) packaging and silicon processing technologies allow the MCP87018 to achieve a low QG for a given RDS(on) Low Series Ga... See More ⇒
mcp87055.pdf
MCP87055 High-Speed N-Channel Power MOSFET Features Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87055 device is an N-Channel power MOSFET in a popular PDFN 3.3 mm x 3.3 mm Low Total Gate Charge (QG) and Gate-to-Drain package. Advanced packaging and silicon processing Charge (QGD) technologies allow the MCP87055 to achieve a low QG Low Series Gate Resista... See More ⇒
mcp87090.pdf
MCP87090 High-Speed N-Channel Power MOSFET Features Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87090 is an N-Channel power MOSFET in a Low Total Gate Charge (QG) and Gate-to-Drain popular PDFN 5 mm x 6 mm package, as well as a Charge (QGD) PDFN 3.3 mm x 3.3 mm package. Advanced Low Series Gate Resistance (RG) packaging and silicon processing technol... See More ⇒
mcp87050.pdf
MCP87050 High-Speed N-Channel Power MOSFET Features Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87050 is an N-Channel power MOSFET in a popular PDFN 5 mm x 6 mm package. Advanced Low Total Gate Charge (QG) and Gate-to-Drain packaging and silicon processing technologies allow Charge (QGD) the MCP87050 to achieve a low QG for a given RDS(ON) Low Series Ga... See More ⇒
Detailed specifications: MCH6429, MCH6660, MCH6661, MCH6662, MCH6663, MCH6664, MCP04N60, MCP04N65, IRL3713, MCP87022, MCP87030, MCP87050, MCP87055, MCP87090, MCP87130, MCPF04N60, MCPF04N65
Keywords - MCP87018 MOSFET specs
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History: AON6710 | MDF11N65B | MDA0531EURH
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